Auger recombination in GaInN/GaN quantum well laser structures

2011 ◽  
Vol 99 (3) ◽  
pp. 031106 ◽  
Author(s):  
M. Brendel ◽  
A. Kruse ◽  
H. Jönen ◽  
L. Hoffmann ◽  
H. Bremers ◽  
...  
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Quantum Well Laser

TUNNEL INJECTION LASERS

1998 ◽  
Vol 09 (04) ◽  
pp. 847-866
Author(s):  
PALLAB BHATTACHARYA
Keyword(s):  
Quantum Well ◽  
High Frequency ◽  
Auger Recombination ◽  
Injection Laser ◽  
Gain Compression ◽  
Carrier Heating ◽  
Hot Carrier ◽  
Quantum Well Laser ◽  
Tunnel Injection ◽  
Carrier Population

Carrier heating in conventional quantum well lasers can lead to several deleterious effects and are related to the transport and thermalization characteristics of injected carriers. The properties of a quantum well laser in which the electrons are directly transported to the lasing subband by tunneling is described here. The resulting device — a tunnel injection laser — is shown to have negligible gain compression, superior high-temperature performance, lower Auger recombination and wavelength chirp, and better high frequency modulation characteristics when compared to conventional lasers. All these improvements are attributed to the reduction of hot-carrier population in the active region of the laser. Results are presented here for lasers made with GaAs — and InP — based heterostructure systems.

scholarly journals Auger Recombination in Quantum Well Laser with Participation of Electrons in Waveguide Region

2018 ◽  
Vol 57 (2) ◽  
pp. 193-198
Author(s):  
A.A. Karpova ◽  
D.M. Samosvat ◽  
A.G. Zegrya ◽  
G.G. Zegrya ◽  
V.E. Bugrov
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Auger Recombination ◽  
Nonradiative Recombination ◽  
Electron Hole ◽  
Quantum Well Laser ◽  
Semiconductor Quantum Wells ◽  
Electron Hole Pair ◽  
Quantum Well Width ◽  
Nonequilibrium Carriers

Abstract A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum wells is suggested and discussed. For a studied Auger recombination process the energy of localized electron-hole pair is transferred to barrier carriers due to Coulomb interaction. The analysis of the rate and the coefficient of this process is carried out. It is shown, that there exists two processes of thresholdless and quasithreshold types, and thresholdless one is dominant. The coefficient of studied process is a non-monotonous function of quantum well width having maximum in region of narrow quantum wells. Comparison of this process with CHCC process shows that these two processes of nonradiative recombination are competing in narrow quantum wells, but prevail at different quantum well widths.

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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