scholarly journals Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure

AIP Advances ◽  
2017 ◽  
Vol 7 (8) ◽  
pp. 085319 ◽  
Author(s):  
Q.-N. Yu ◽  
Y. Jia ◽  
W. Lu ◽  
M.-Q. Wang ◽  
F. Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Emission Rate ◽  
Laser Structure ◽  
Experimental Characterization ◽  
Optically Pumped ◽  
Spontaneous Emission Rate ◽  
Quantum Well Laser

Spontaneous Emission Rate and Radiative Current Density in p-GaAs/i-GaNAsBi/n-GaAs Quantum Well Lasers

2019 ◽  
Vol 16 (11) ◽  
pp. 4474-4478
Author(s):  
Ikram Hassouna Guizani ◽  
Ahmed Alhadi Rebey
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spontaneous Emission ◽  
Current Density ◽  
Stark Effect ◽  
Emission Rate ◽  
Spontaneous Emission Rate ◽  
Doping Density ◽  
Quantum Well Structures ◽  
Quantum Confined Stark Effect

We have theoretically investigated the 1.55 μm emission of p–i–n GaNAsBi-based quantum wells (QWs) using a self-consistent calculation combined with (16×16) BAC model. Their performances are evaluated in terms of spontaneous emission rate Rsp and radiative current density Jrad. We have found that Jrad increases as function of the injected carrier density as well as the doping density. The quantum confined Stark effect on radiative current density in ideal lasers is also discussed. The radiative current density versus well width for simple and double p-GaAs/i-GaN·58yAs1-1·58yBiy/n-GaAs quantum well structures is also examined. We have obtained that Jrad increases with increase average thickness of GaNAsBi active region. The optimization of well parameters can be used as a basis for GaNAsBi-based lasers intended for optical fiber telecommunication wavelength.

High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes

2009 ◽  
Vol 95 (21) ◽  
pp. 211104 ◽  
Author(s):  
Lei Wang ◽  
Rui Li ◽  
Ziwen Yang ◽  
Ding Li ◽  
Tao Yu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Light Emitting Diodes ◽  
Emission Rate ◽  
Spontaneous Emission Rate ◽  
Light Emitting

scholarly journals Photoluminescence characterization of GaAs quantum well laser structure with AlAs/GaAs superlattices waveguide

1992 ◽  
Vol 72 (12) ◽  
pp. 5861-5866 ◽  
Author(s):  
M. L. Dotor ◽  
M. Recio ◽  
D. Golmayo ◽  
F. Briones
Keyword(s):  
Quantum Well ◽  
Laser Structure ◽  
Quantum Well Laser

Spontaneous emission rate alteration in optical waveguide structures

1990 ◽  
Vol 26 (9) ◽  
pp. 1492-1499 ◽  
Author(s):  
S.D. Brorson ◽  
H. Yokoyama ◽  
E.P. Ippen
Keyword(s):  
Optical Waveguide ◽  
Spontaneous Emission ◽  
Emission Rate ◽  
Spontaneous Emission Rate
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