A correlation study of MOL electrical test method with its physical analysis

2013 ◽  
Author(s):  
T. Cahyadi ◽  
F. Chen ◽  
H. Jiang ◽  
S. Mittl ◽  
E. C. Chua
Keyword(s):  
Correlation Study ◽  
Test Method ◽  
Physical Analysis ◽  
Electrical Test

An electrical test method for quality detecting of wafer level eutectic bonding

2016 ◽  
Vol 27 (1) ◽  
pp. 015028 ◽  
Author(s):  
Lemin Zhang ◽  
Binbin Jiao ◽  
Will Ku ◽  
Li-Tien Tseng ◽  
Yanmei Kong ◽  
...  
Keyword(s):  
Test Method ◽  
Wafer Level ◽  
Eutectic Bonding ◽  
Electrical Test

Electrical test method of open defects at data buses in 3D SRAM IC

2014 ◽  
Author(s):  
Yudai Shiraishi ◽  
Masaki Hashizume ◽  
Hiroyuki Yotsuyanagi ◽  
Tetsuo Tada ◽  
Shyue-Kung Lu
Keyword(s):  
Test Method ◽  
Electrical Test ◽  
Open Defects ◽  
Data Buses

Analog and Mixed Signal Diagnosis Flow Using Fault Isolation Techniques and Simulation

2020 ◽  
Author(s):  
Tommaso Melis ◽  
Emmanuel Simeu ◽  
Etienne Auvray
Keyword(s):  
Failure Analysis ◽  
Fault Simulation ◽  
Fault Isolation ◽  
Physical Analysis ◽  
Actual Process ◽  
Electrical Test ◽  
Simulation Tools ◽  
Isolation Techniques ◽  
Process Node ◽  
Emission Microscopy

Abstract Getting accurate fault isolation during failure analysis is mandatory for success of Physical Failure Analysis (PFA) in critical applications. Unfortunately, achieving such accuracy is becoming more and more difficult with today’s diagnosis tools and actual process node such as BCD9 and FinFET 7 nm, compromising the success of subsequent PFA done on defective SoCs. Electrical simulation is used to reproduce emission microscopy, in our previous work and, in this paper, we demonstrate the possibility of using fault simulation tools with the results of electrical test and fault isolation techniques to provide diagnosis with accurate candidates for physical analysis. The experimental results of the presented flow, from several cases of application, show the validity of this approach.

Comparison of Failure for HBM ESD Testers Meeting ANSI/ESD S-5.1 or the New ESDA Standard Test Method and JEDEC Standard

1998 ◽  
Author(s):  
Fred Khosropour ◽  
Colin Hatchard ◽  
Ian Morgan ◽  
Leo G. Henry
Keyword(s):  
Cmos Technology ◽  
Standard Test ◽  
Test Method ◽  
Physical Analysis ◽  
Human Body Model ◽  
Standard Test Method ◽  
Technology Products ◽  
Discharge Model ◽  
The Impact ◽  
First Time

Abstract The ESD Association standard ANSI/ESDA S-5.1 1993 for testing sensitivity to the Human Body Model (HBM) 1 forms the basis around which the majority of automated HBM ESD simulators have been constructed. As device pin counts increase it is unlikely that new larger simulators for > 512 pins will be capable of meeting this standard 2, since increased parasitics will increase the effective socket (stray) capacitance. However, such larger HBM simulators are expected to meet both the JEDEC Standard JESD-22-114A, 1997 3 and the newly issued ESDA Standard Test Method, ESD STM 5.1, 19984. This paper begins to evaluate the several questions regarding the correlation of HBM Withstand Voltage when used to characterize state-of-the-art semiconductor IC's, between simulators meeting the (NEW) standards JESD 22, ESD STM- 5.1 and those existing simulators presently in daily use, which typically meet the (OLD) ESDA S-5.1. This paper for the first time investigates the impact of "effective" socket capacitance in the same tester; i.e., with the same discharge model and the same pin selection mechanism. The experimental investigation was based on stressing three different sub-micron CMOS technology products; firstly on a simulator meeting the OLD standard and then on a modified version of this simulator meeting the NEW standards. Electrical properties of damaged pins and physical analysis was used to establish common Failure Signatures5 for the two mother boards.

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