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2021 ◽  
Author(s):  
Sean M. Oliver ◽  
Dmitro J. Martynowych ◽  
Matthew J. Turne ◽  
David A. Hopper ◽  
Ronald L. Walswort ◽  
...  

Abstract The increasing trend for industry adoption of three-dimensional (3D) microelectronics packaging necessitates the development of new and innovative approaches to failure analysis. To that end, our team is developing a tool called the quantum diamond microscope (QDM) that leverages an ensemble of nitrogenvacancy (NV) centers in diamond for simultaneous wide fieldof- view, high spatial resolution, vector magnetic field imaging of microelectronics under ambient conditions [1,2]. Here, we present QDM measurements of two-dimensional (2D) current distributions in an 8 nm process node flip chip integrated circuit (IC) and 3D current distributions in a custom, multi-layer printed circuit board (PCB). Magnetic field emanations from the C4 bumps in the flip chip dominate the QDM measurements, but these prove to be useful for image registration and can be subtracted to resolve adjacent current traces on the micron scale in the die. Vias, an important component in 3D ICs, display only Bx and By magnetic fields due to their vertical orientation, which are challenging to detect with magnetometers that traditionally only measure the Bz component of the magnetic field (orthogonal to the IC surface). Using the multi-layer PCB, we demonstrate that the QDM's ability to simultaneously measure Bx, By, and Bz magnetic field components in 3D structures is advantageous for resolving magnetic fields from vias as current passes between layers. The height difference between two conducting layers is determined by the magnetic field images and agrees with the PCB design specifications. In our initial steps to provide further z depth information for current sources in complex 3D circuits using the QDM, we demonstrate that, due to the linear properties of Maxwell's equations, magnetic field images of individual layers can be subtracted from the magnetic field image of the total structure. This allows for isolation of signal from individual layers in the device that can be used to map embedded current paths via solution of the 2D magnetic inverse. Such an approach suggests an iterative analysis protocol that utilizes neural networks trained with images containing various classes of current sources, standoff distances, and noise integrated with prior information of ICs to subtract current sources layer by layer and provide z depth information. This initial study demonstrates the usefulness of the QDM for failure analysis and points to technical advances of this technique to come.


Author(s):  
Nurdin ◽  
Muhammad Hutomi ◽  
Mukti Qamal ◽  
Bustami Bustami

The abundance of online shops on web ecommerce Shopee's makes it difficult for consumers to detect the genuineness of an online store. Online store detection app is an application to detect genuine online shop, good rating online shop, and fake online shop, which is useful as a recommendation to consumers in buying a product against an online shop. Detection by implementing the Breadth First Search (BFS) algorithm with Web Scraping techniques against Web e-commerce  Shopee with the keyword "Kemeja Pria" with a search number of 5000, generate 1389 online shops data with the detection results of genuine online shop, good rating online shop, and fake online shop respectively as many as 90 online shops (6.5%), 948 online shops (68.3%), and 351 online shops (25.3%). The time it takes for the system to visit each node, from the first node to the 1389 node by applying the Breadth First Search algorithm takes about 2,690,021 second, or about 44.833683333 minutes, with the queue formation process, node browsing, online shop detection, and test results. The results reveal that the Breadth First Search algorithm is a simple algorithm that can be used to perform online store detection with good performance.


Author(s):  
Tommaso Melis ◽  
Emmanuel Simeu ◽  
Etienne Auvray

Abstract Getting accurate fault isolation during failure analysis is mandatory for success of Physical Failure Analysis (PFA) in critical applications. Unfortunately, achieving such accuracy is becoming more and more difficult with today’s diagnosis tools and actual process node such as BCD9 and FinFET 7 nm, compromising the success of subsequent PFA done on defective SoCs. Electrical simulation is used to reproduce emission microscopy, in our previous work and, in this paper, we demonstrate the possibility of using fault simulation tools with the results of electrical test and fault isolation techniques to provide diagnosis with accurate candidates for physical analysis. The experimental results of the presented flow, from several cases of application, show the validity of this approach.


2020 ◽  
Vol 166 ◽  
pp. 107769
Author(s):  
Paul Clifton ◽  
Andreas Goebel ◽  
Matthias Kessler ◽  
Martin Majer ◽  
Karsten Knaeblein ◽  
...  
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