Challenges and solutions in the process integration of ultra-shallow junctions in advanced CMOS technology

2003 ◽  
Author(s):  
N. Variam ◽  
S. Falk ◽  
S. Mehta ◽  
T. Miranda ◽  
J. Lutze
Keyword(s):  
Process Integration ◽  
Cmos Technology ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology

2004 ◽  
Vol 186 (1-2) ◽  
pp. 17-20 ◽  
Author(s):  
F Lallement ◽  
A Grouillet ◽  
M Juhel ◽  
J.-P Reynard ◽  
D Lenoble ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Mechanism of Dopant Activation Enhancement in Shallow Junctions by Hydrogen

2005 ◽  
Vol 864 ◽  
Author(s):  
A. Vengurlekar ◽  
S. Ashok ◽  
Christine. E. Kalnas ◽  
H. Win Ye
Keyword(s):  
Atomic Hydrogen ◽  
Annealing Temperature ◽  
Process Integration ◽  
Hydrogen Plasma ◽  
Cmos Technology ◽  
Dopant Activation ◽  
Enhanced Diffusion ◽  
Device Scaling ◽  
High K ◽  
Shallow Junctions

AbstractThe ability to activate greater amounts of dopants is a significant challenge for the realization of shallow junctions in device scaling for Si CMOS technology. Dopant activation is difficult to achieve in shallow junctions due to higher concentrations of dopants and possible formation of dopant clusters. The high temperatures currently used to activate dopants result in increased junction depth and process integration issues with high-k dielectrics. However, lowering the annealing temperature results in lesser dopant activation and problems with transient enhanced diffusion. Our previous work reported on the enhancement of activation in boron implanted at a dose of 5E14/cm2 and annealed at temperatures of 450 °C and below, by the incorporation of atomic hydrogen introduced by exposing the substrate to a hydrogen plasma at 250 °C. In this work, further experiments have been carried out to get a better understanding of the mechanisms responsible for boron activation enhancement. Hydrogen-related activation was studied in boron, phosphorus and antimony implanted samples. The experimental results shed new light on the interactions among atomic hydrogen, point defects and dopants.

Solid Phase Epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions

2004 ◽  
Vol 810 ◽  
Author(s):  
R. El Farhane ◽  
C. Laviron ◽  
F. Cristiano ◽  
N. Cherkashin ◽  
P. Morin ◽  
...  
Keyword(s):  
Process Integration ◽  
Solid Phase ◽  
Cmos Process ◽  
Solid Phase Epitaxy ◽  
Electrical Characteristics ◽  
Use Of Self ◽  
Thermal Budget ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Low Thermal Budget

ABSTRACTWe demonstrate in this paper the viability of an ultra-low thermal budget CMOS process enabling the formation of ultra shallow junctions with competitive transistor characteristics. In particular, we demonstrate in this work the influence of defects on chemical and electrical results. It is shown that the use of self-amorphizing implantation with BF2for Source/Drain, reduces the junction leakage by two decades.

Technology Computer Aided Design of Ultra-shallow Junctions in Si Devices Formed by Laser Annealing Processes

2004 ◽  
Vol 810 ◽  
Author(s):  
Antonino La Magna ◽  
Paola Alippi ◽  
Vittorio Privitera ◽  
Guglielmo Fortunato ◽  
Marco Camalleri ◽  
...  
Keyword(s):  
Phase Field ◽  
Computer Aided Design ◽  
Laser Annealing ◽  
Process Integration ◽  
Source Distribution ◽  
Field Equations ◽  
Excimer Laser Annealing ◽  
Shallow Junctions ◽  
Simulation Results ◽  
Ultra Shallow Junctions

ABSTRACTThe simulation of laser annealing, applied to the formation of ultra-shallow junctions in Si, is discussed. Our effort is developing tools capable to aid the process integration issue. The numerical approach deals with a double problem: 1) the interaction between the irradiated transistor structure and the laser light, 2) the non-equilibrium evolution of the thermal field, molten regions and dopant density. Here we present a complete methodology: the calculated heat source distribution, induced by the irradiation, is used as input of a phase-field approach for the simulation of the thermal phase and impurity fields. We solved numerically the phase field equations in two dimensional structures, considering as an initial status the generic material modification due to an ion implant process. We present various simulation results obtained in MOS structures with different geometry. With the support of the simulation results we discuss the problematic and the perspectives of the excimer laser annealing process application in the fabrication of MOS devices.

Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node

2004 ◽  
Vol 810 ◽  
Author(s):  
Simone Severi ◽  
Kirklen Henson ◽  
Richard Lindsay ◽  
Anne Lauwers ◽  
Bartek J. Pawlak ◽  
...  
Keyword(s):  
Good Control ◽  
Cmos Technology ◽  
Technology Node ◽  
Reasonable Alternative ◽  
Shallow Junctions ◽  
Channel Engineering ◽  
Ultra Shallow Junctions ◽  
And Performance ◽  
Spike Anneal

ABSTRACTThe feasibility of the SPER junction process as a reasonable alternative to the spike anneal junction is proved in this work. Good control of the SCE and performance competitive results as compared to the spike junction are obtained. An analysis of the interaction between the halo dopant and the SPER junctions has been carried out; it is shown that the performance degrades with increasing halo dose as a consequence of an overlap resistance problem.

Formation of Ultra-Shallow Junctions by Advanced Plasma Doping Techniques

2011 ◽  
Author(s):  
G. D. Papasouliotis ◽  
L. Godet ◽  
V. Singh ◽  
R. Miura ◽  
H. Ito ◽  
...  
Keyword(s):  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions
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