Technology Computer Aided Design of Ultra-shallow Junctions in Si Devices Formed by Laser Annealing Processes

2004 ◽  
Vol 810 ◽  
Author(s):  
Antonino La Magna ◽  
Paola Alippi ◽  
Vittorio Privitera ◽  
Guglielmo Fortunato ◽  
Marco Camalleri ◽  
...  
Keyword(s):  
Phase Field ◽  
Computer Aided Design ◽  
Laser Annealing ◽  
Process Integration ◽  
Source Distribution ◽  
Field Equations ◽  
Excimer Laser Annealing ◽  
Shallow Junctions ◽  
Simulation Results ◽  
Ultra Shallow Junctions

ABSTRACTThe simulation of laser annealing, applied to the formation of ultra-shallow junctions in Si, is discussed. Our effort is developing tools capable to aid the process integration issue. The numerical approach deals with a double problem: 1) the interaction between the irradiated transistor structure and the laser light, 2) the non-equilibrium evolution of the thermal field, molten regions and dopant density. Here we present a complete methodology: the calculated heat source distribution, induced by the irradiation, is used as input of a phase-field approach for the simulation of the thermal phase and impurity fields. We solved numerically the phase field equations in two dimensional structures, considering as an initial status the generic material modification due to an ion implant process. We present various simulation results obtained in MOS structures with different geometry. With the support of the simulation results we discuss the problematic and the perspectives of the excimer laser annealing process application in the fabrication of MOS devices.

Ultra-Shallow Junction Formation by Excimer Laser Annealing of Ultra-Low Energy B Implanted in Si

2003 ◽  
Vol 765 ◽  
Author(s):  
G. Fortunato ◽  
L. Mariucci ◽  
V. Privitera ◽  
A. La Magna ◽  
S. Whelan ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Pulses ◽  
Low Energy ◽  
Excimer Laser Annealing ◽  
High Resolution Tem ◽  
Ultra Shallow Junctions ◽  
Dopant Redistribution ◽  
Melt Duration

AbstractFormation of ultra-shallow junctions by excimer laser annealing (ELA) of ultra-low energy (1keV –250 eV) B implanted in Si has been investigated. High resolution TEM has been used to assess the as-implanted damage and the crystal recovery following ELA. The electrical activation and redistribution of B in Si during ELA has been studied as a function of the laser energy density (melt depth), the implant dose and the number of laser pulses (melt duration). Under appropriate ELA conditions, ultra-shallow profiles, extending to a depth as low as 35 nm with an abrupt profile (2.5 nm/dec), have been achieved. A significant amount of the implanted dopant was lost from the sample following ELA. However, the dopant that was retained in crystal material was fully activated following rapid re-solidification. We developed a theoretical model, that considers the dopant redistribution during melting and regrowth, showing that the fraction of the implanted dopant not activated during ELA was lost from the sample through out diffusion. The lateral distribution of the implanted B following laser annealing has been studied with 2-D measurements, using selective etching and cross-section TEM on samples where the implanted dopant was confined by using test structures including windows opened in silicon dioxide masks and patterned gate stack structures.

A phase-field approach to the simulation of the excimer laser annealing process in Si

2004 ◽  
Vol 95 (9) ◽  
pp. 4806-4814 ◽  
Author(s):  
Antonino La Magna ◽  
Paola Alippi ◽  
Vittorio Privitera ◽  
Guglielmo Fortunato ◽  
Marco Camalleri ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Phase Field ◽  
Laser Annealing ◽  
Annealing Process ◽  
Excimer Laser Annealing ◽  
Field Approach

Ultra-Shallow Junctions Formed By Sub-Melt Laser Annealing

2006 ◽  
Author(s):  
S. B. Felch ◽  
A. Falepin ◽  
S. Severi ◽  
E. Augendre ◽  
T. Hoffman ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Bragg reflector based gate stack architecture for process integration of excimer laser annealing

2006 ◽  
Vol 89 (25) ◽  
pp. 253502
Author(s):  
G. Fortunato ◽  
L. Mariucci ◽  
M. Cuscunà ◽  
V. Privitera ◽  
A. La Magna ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Process Integration ◽  
Bragg Reflector ◽  
Gate Stack ◽  
Excimer Laser Annealing

Solid Phase Epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions

2004 ◽  
Vol 810 ◽  
Author(s):  
R. El Farhane ◽  
C. Laviron ◽  
F. Cristiano ◽  
N. Cherkashin ◽  
P. Morin ◽  
...  
Keyword(s):  
Process Integration ◽  
Solid Phase ◽  
Cmos Process ◽  
Solid Phase Epitaxy ◽  
Electrical Characteristics ◽  
Use Of Self ◽  
Thermal Budget ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Low Thermal Budget

ABSTRACTWe demonstrate in this paper the viability of an ultra-low thermal budget CMOS process enabling the formation of ultra shallow junctions with competitive transistor characteristics. In particular, we demonstrate in this work the influence of defects on chemical and electrical results. It is shown that the use of self-amorphizing implantation with BF2for Source/Drain, reduces the junction leakage by two decades.

scholarly journals Simulations of the Ultra-Fast Kinetics in Ni-Si-C Ternary Systems under Laser Irradiations

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4769
Author(s):  
Salvatore Sanzaro ◽  
Corrado Bongiorno ◽  
Paolo Badalà ◽  
Anna Bassi ◽  
Ioannis Deretzis ◽  
...  
Keyword(s):  
Phase Field ◽  
Computer Aided Design ◽  
Laser Annealing ◽  
Numerical Solutions ◽  
Laser Energy ◽  
Melting Process ◽  
Process Conditions ◽  
Large Set ◽  
Fast Kinetics ◽  
Starting State

We present a method for the simulation of the kinetic evolution in the sub µs timescale for composite materials containing regions occupied by alloys, compounds, and mixtures belonging to the Ni-Si-C ternary system. Pulsed laser irradiation (pulses of the order of 100 ns) promotes this evolution. The simulation approach is formulated in the framework of the phase-field theory and it consists of a system of coupled non-linear partial differential equations (PDEs), which considers as variables the following fields: the laser electro-magnetic field, the temperature, the phase-field and the material (Ni, Si, C, C clusters and Ni-silicides) densities. The model integrates a large set of materials and reaction parameters which could also self-consistently depend on the model variables. A parameter calibration is also proposed, specifically suited for the wavelength of a widely used class of excimer lasers (? = 308 nm). The model is implemented on a proprietary laser annealing technology computer-aided design (TCAD) tool based on the finite element method (FEM). This integration allows, in principle, numerical solutions in systems of any dimension. Here we discuss the complex simulation trend in the one-dimensional case, considering as a starting state, thin films on 4H-SiC substrates, i.e., a configuration reproducing a technologically relevant case study. Simulations as a function of the laser energy density show an articulated scenario, also induced by the variables’ dependency of the materials’ parameters, for the non-melting, partial-melting and full-melting process conditions. The simulation results are validated by post-process experimental analyses of the microstructure and composition of the irradiated samples.

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