Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

2008 ◽  
Vol 254 (19) ◽  
pp. 6208-6210 ◽  
Author(s):  
M. Matsumoto ◽  
Y. Inayoshi ◽  
M. Suemitsu ◽  
E. Miyamoto ◽  
T. Yara ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Atmospheric Pressure ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Silicon Nitride Films

Low Temperature Deposition of Si-based Thin Films on Plastic Films Using Pulsed-Discharge PECVD under Near Atmospheric Pressure

2008 ◽  
Vol 1066 ◽  
Author(s):  
Mitsutaka Matsumoto ◽  
Yohei Inayoshi ◽  
Maki Suemitsu ◽  
Setsuo Nakajima ◽  
Tsuyoshi Uehara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atmospheric Pressure ◽  
Short Pulse ◽  
Inert Gases ◽  
Pulsed Plasma ◽  
Pulsed Discharge ◽  
Plasma Cvd ◽  
Plastic Films ◽  
Temperature Deposition ◽  
Pet Films

ABSTRACTLow temperature (150 °C) deposition of doped and undoped polycrystalline Si (poly-Si) as well as SiNX films on polyethylene terephthalate (PET) films has been achieved with practical deposition rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2 for poly-Si while N2 has been additionally used for SiNx. No inert gases such as He was used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. With this technique, deposition of poly-Si thin film with virtually no incubation layer is possible, which in the case of P-doped poly-Si shows a Hall mobility (μH) of 1.5 cm2/V·s.

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD

2011 ◽  
Vol 257 (11) ◽  
pp. 5052-5058 ◽  
Author(s):  
Abhijeet Kshirsagar ◽  
Pradeep Nyaupane ◽  
Dhananjay Bodas ◽  
S.P. Duttagupta ◽  
S.A. Gangal
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Plasma Cvd ◽  
Inductively Coupled ◽  
Silicon Nitride Films

scholarly journals Low Temperature Growth of Polycrystalline Si Films Using Pulsed-Plasma CVD under Near Atmospheric Pressure

2008 ◽  
Vol 51 (10) ◽  
pp. 653-656
Author(s):  
Mitsutaka MATSUMOTO ◽  
Yasutake TOYOSHIMA ◽  
Setsuo NAKAJIMA ◽  
Maki SUEMITSU
Keyword(s):  
Low Temperature ◽  
Atmospheric Pressure ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Si Films

Low-temperature hydrolysis (oxidation) of plasma-deposited silicon nitride films

1989 ◽  
Vol 1 (2) ◽  
pp. 194-198 ◽  
Author(s):  
J. N. Chiang ◽  
S. G. Ghanayem ◽  
D. W. Hess
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Nitride Films

Spectrometric analysis of silicon nitride films deposited by low-temperature liquid-source CVD

2019 ◽  
Vol 126 (13) ◽  
pp. 133101 ◽  
Author(s):  
R. Kou ◽  
N. Yamamoto ◽  
G. Fujii ◽  
T. Aihara ◽  
T. Tsuchizawa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Spectrometric Analysis ◽  
Silicon Nitride Films ◽  
Liquid Source ◽  
Temperature Liquid

Low Temperature Remote Plasma Assisted Jet Vapor Deposition of Silicon Nitride

1997 ◽  
Vol 495 ◽  
Author(s):  
J. Veteran ◽  
C. Hobbs ◽  
R. Hegde ◽  
P. Tobin ◽  
V. Wang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Microwave Cavity ◽  
Promising Technique ◽  
Thermal Budget ◽  
Silicon Nitride Films ◽  
Jet Vapor Deposition ◽  
Process Gases

ABSTRACTAs MOSFET dimensions are aggressively scaled, minimizing the thermal budget becomes critical for limiting the diffusion of channel profiles. Unfortunately, high quality dielectrics with low deposition temperatures have not been readily available. Typical room temperature dielectrics are porous and electrically leaky. A promising technique for low temperature dielectric deposition is Jet Vapor Deposition (JVD). [1] Two coaxial quartz nozzles spray the process gases to the substrate surface at super-sonic speeds while a microwave cavity generates a plasma in the nozzle. [2] We have successfully deposited silicon nitride films using SiH4/He and N2/He gas mixtures. These are the first reported JVD results on 200 mm wafers.

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