PACVD Fluorinated Silicon Nitride Films Deposited From SiF4/NH3 GAS MIXTURES

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Castro ◽  
M. Gasset ◽  
C. Gomez-Aleixandre ◽  
O. Sanchez ◽  
J. M. Albella
Keyword(s):  
Silicon Nitride ◽  
Low Frequency ◽  
Fluorine Content ◽  
Emission Spectra ◽  
Deposition Process ◽  
Gas Mixtures ◽  
Silicon Nitride Films ◽  
Deposition Parameters ◽  
Wide Range ◽  
Analytical Resolution

ABSTRACTFluorinated silicon nitride films deposited from SiF4/NH3 gas mixtures by PACVD at two different frequencies have been investigated. At 13.56 MHz, low deposition rate was detected and no appreciable changes were observed when the deposition parameters varied in a wide range. On the contrary, higher deposition rates were achieved when a 35 KHz frequency was applied. These low frequency silicon nitride films showed an increase in the fluorine content In their structure when the SiF4 flow ratio in the gas mixture was increased, as detected by analytical resolution of the IR spectra. In addition, analysis of the plasma emission spectra has been performed in order to explain the effect of the plasma frequency in the deposition process.

Comparative Study of the Optical and Vibrational Properties of a-SiNx:H Films Prepared from SiH4-N2 and SiH4-NH3 Gas Mixtures by rf Plasma

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Campmany ◽  
E. Bertran ◽  
J.L. Andújar ◽  
A. Canillas ◽  
J. M. López-Villegas ◽  
...  
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Growth Models ◽  
Nitrogen Concentration ◽  
Gas Mixtures ◽  
Rf Plasma ◽  
Vibrational Properties ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Wide Range

ABSTRACTThe properties of amorphous silicon nitride films (a-SiNx:H) prepared by PECVD from SiH4-NH3 and SiH4-N2 gas mixtures have been determined by spectroscopie ellipsometry and FTIR spectroscopy as a function of the nitrogen concentration measured by XPS. The films are transparent for silane ratios [SiH4]/([SiH4] + [NH3]) < 20% and [SiH4]/([SiH4] + [N,]) < 1.5%. The refractive index shows a wide range of progressive variation from 3.2 for high silane concentrations to 1.8 for low silane concentrations. The hydrogen content of the low-absorbing films has much lower values for those obtained by SiH4 + N2 plasma than for those obtained by SiH4 + NH3 plasma. The results are discussed in terms of growth models of PECVD a-SiNx:H films from SiH4-NH3 and SiH4-N2 mixtures.

Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS

2011 ◽  
Vol 04 (03) ◽  
pp. 255-259 ◽  
Author(s):  
YANG YIN ◽  
WANJIN XU ◽  
GUANGZHAO RAN ◽  
GUOGANG QIN ◽  
BIN ZHANG
Keyword(s):  
Silicon Nitride ◽  
Indium Tin Oxide ◽  
Electrical Transport ◽  
Power Efficiency ◽  
Great Influence ◽  
Silicon Nitride Films ◽  
Wide Range ◽  
Si Content ◽  
Er Doped ◽  
Electro Luminescence

Both Er -doped Si -rich silicon nitride ( Er : Si 3(1+x) N 4) films and electroluminescence (EL) devices with structure of indium tin oxide/ Er : Si 3(1+x) N 4/ p-Si with varying Si and Er contents have been fabricated by reactive magnetron sputtering technique. We have investigated the effects of the excess Si content in a wide range (x from 0 to 2.1) on the Er3+ 1.54 μm photoluminescence (PL), EL and the electrical transport of the Er : Si 3(1+x) N 4 films. It is found that the Er 3+ 1.54 μm PL intensity of the Er : Si 3(1+x) N 4 films and the EL power efficiency of the Er : Si 3(1+x) N 4 devices exhibit strong dependences on x and are enhanced by one to two orders of magnitude around x = 0.27 and x = 0.53, respectively. The Er concentration also has a great influence on both Er 3+ 1.54 μm PL and EL of the Er:Si 3(1+x) N 4 films. The optimum Er concentrations for PL and EL in the Er:Si 3(1+x) N 4 films with x = 0.53 are both ~3 at.%.

Effect of the hydrogen content in the optical properties and etching of silicon nitride films deposited by PECVD for uncooled microbolometers

2005 ◽  
Vol 862 ◽  
Author(s):  
R. Ambrosio ◽  
A. Torres ◽  
A. Kosarev ◽  
M. Landa ◽  
A. Heredia
Keyword(s):  
Hydrogen Bonding ◽  
Silicon Nitride ◽  
Hydrogen Content ◽  
Etch Rate ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Quantitative Results ◽  
Deposited Films

AbstractWe have studied silicon nitride films a-SiN:H deposited at a substrate temperature of 350°C by means of the Low frequency (LF) PECVD from silane and nitrogen as stock gases. Film properties as hydrogen bonding and content, nitrogen content, refractive index and etch rate are reported and analyzed. Our deposited films show physical properties similar to those that are obtained deposition temperatures of 700°C by the low pressure chemical vapor deposition (LPCVD) technique. An investigation of bonding structures for the deposited films was performed, and quantitative results for hydrogen bonding based on Fourier Transform Infrared (FTIR) analysis are presented. It was observed that low hydrogen content in the films is in good correlation with low etch rate in 10% buffered HF solution, therefore these films present a material with good etch selectivity in respect to others materials (as phosphosilicate glass PSG, Al etc). Selectivity which makes these films very promising in surface micromachining for fabrication of sensors and device structures, e.g. microbolometers. Additionally, the Si-N bond at 830-840cm-1was analyzed because of its big absorption produced at 12μm; therefore these films can be used as absorber layers in uncooled microbolometres.

Postbuckled Square Thin Film Membranes Under Differential Pressure

2001 ◽  
Vol 695 ◽  
Author(s):  
Torsten Kramer ◽  
Oliver Paul
Keyword(s):  
Thin Film ◽  
Finite Element ◽  
Silicon Nitride ◽  
Transition Process ◽  
Differential Pressure ◽  
Finite Element Simulations ◽  
Membrane Material ◽  
Silicon Nitride Films ◽  
Wide Range ◽  
Quantitative Results

ABSTRACTWe report quantitative results on the load-deflection response of compressively prestressed square membranes under differential pressure. The membranes consist of 0.485 μm and 1.9 μm thick silicon nitride films. For these square membranes we observed a new symmetry transition of the deflection profile between a state without reflection symmetries at small loads to a state with reflection symmetries at sufficiently large loads. The load-deflection response was modeled by finite element simulations covering a wide range of prestrains e0 and pressures using various geometries. From the symmetry transition process, Young's modulus E = (150±5) GPa and the prestrain ε0 = (1.6±0.1) 10-3 of the membrane material was extracted.

Silicon nitride films by plasma-CVD from SiH4-N2and SiF4-N2-H2gas mixtures

1984 ◽  
Author(s):  
S. Fujita ◽  
Nan-Sheng Zhou ◽  
H. Toyoshima ◽  
T. Ohishi ◽  
A. Sasaki
Keyword(s):  
Silicon Nitride ◽  
Gas Mixtures ◽  
Plasma Cvd ◽  
Silicon Nitride Films

Investigations of Silicon Nitride Films for Silicon Solar Cells

1996 ◽  
Vol 426 ◽  
Author(s):  
J. R. Elmiger ◽  
M. Kunst
Keyword(s):  
Silicon Nitride ◽  
Crystalline Silicon ◽  
Chemical Vapour ◽  
Deposition Process ◽  
Transient Signal ◽  
Strong Impact ◽  
Film Composition ◽  
Time Resolved ◽  
Silicon Nitride Films ◽  
On Line

AbstractSilicon nitride films on crystalline silicon were deposited in a low-temperature (< 400 °C ) Plasma Enhanced Chemical Vapour Deposition process. The deposition process is monitored with in situ Time Resolved Microwave Conductivity measurements leading to an on-line quality control of the deposited films. It is shown that at the start of the deposition there is a strong decrease of the lifetime of the measured transient signal due to plasma induced damage at the silicon surface. Afterwards an increase of the lifetime is observed due to passivation of the interface. For thin films (< 30 nm), the lifetime and the film composition depend on the film thickness. Furthermore, the film composition has a strong impact on the passivation of thick (100 nm ) silicon nitride films. The best passivation is obtained for almost stoichiometric films characterized by a refractive index of 1.95.

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