The recovery effect of hot-carrier degradation under dynamic stress condition for SOI-nLDMOS device

Author(s):  
Chunwei Zhang ◽  
Siyang Liu ◽  
Weifeng Sun ◽  
Wei Su ◽  
Yuwei Liu ◽  
...  
2009 ◽  
Vol 49 (1) ◽  
pp. 8-12 ◽  
Author(s):  
Chao Gao ◽  
Jun Wang ◽  
Lei Wang ◽  
Andrew Yap ◽  
Hong Li

Author(s):  
W. Weber ◽  
M. Brox ◽  
R. Bellens ◽  
P. Heremans ◽  
G. Groeseneken ◽  
...  

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-787-C4-790
Author(s):  
P. T.J. BIERMANS ◽  
T. POORTER ◽  
H. J.H. MERKS-EPPINGBROEK

2021 ◽  
Vol 68 (4) ◽  
pp. 1804-1809
Author(s):  
Bernhard Ruch ◽  
Gregor Pobegen ◽  
Tibor Grasser

Sign in / Sign up

Export Citation Format

Share Document