Silica film preparation by chemical vapor deposition using vacuum ultraviolet excimer lamps

2000 ◽  
Author(s):  
K. Kurosawa ◽  
H. Yanagida ◽  
N. Takezoe ◽  
Takezoe ◽  
Y. Kawasaki ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Vacuum Ultraviolet ◽  
Chemical Vapor ◽  
Silica Film ◽  
Excimer Lamps ◽  
Film Preparation

Silica film preparation by chemical vapor deposition using vacuum ultraviolet excimer lamps

2000 ◽  
Vol 168 (1-4) ◽  
pp. 37-40 ◽  
Author(s):  
K. Kurosawa ◽  
N. Takezoe ◽  
H. Yanagida ◽  
J. Miyano ◽  
Y. Motoyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Vacuum Ultraviolet ◽  
Chemical Vapor ◽  
Silica Film ◽  
Excimer Lamps ◽  
Film Preparation

The photosensitivity and ultraviolet absorption change of Sn-doped silica film fabricated by modified chemical vapor deposition

2004 ◽  
Vol 96 (11) ◽  
pp. 6153-6158 ◽  
Author(s):  
Guanghui Chen ◽  
Yigang Li ◽  
Liying Liu ◽  
Yaoji He ◽  
Lei Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silica Film ◽  
Ultraviolet Absorption ◽  
Absorption Change

Deposition of Oxide Based Advanced Electronic and Optical Materials by Rapid Isothermal Processing (RIP) Assisted Metalorganic Chemical Vapor Deposition (MOCVD)

1994 ◽  
Vol 342 ◽  
Author(s):  
J. Mavoori ◽  
R. Singh ◽  
R. Sharangpani ◽  
C. Gong ◽  
K. F. Poole ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Vacuum Ultraviolet ◽  
Chemical Vapor ◽  
Advanced Materials ◽  
Beneficial Effects ◽  
Temperature Deposition ◽  
Rapid Isothermal Processing ◽  
Metalorganic Chemical

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) is an ideal technique for the deposition of conducting and non-conducting oxide based thin film materials. In this paper we present our study of RIP assisted MOCVD for the low temperature deposition of a number of oxide based advanced materials which are useful for the development of the next generation of microelectronic and optoelectronic devices. We have designed several experiments to understand the role of photoeffects in RIP assisted MOCVD. The vacuum ultraviolet, ultraviolet and visible (λ ≤ 0.7–0.8μm) photons can have several beneficial effects including the enhancement of the surface reactions of the absorbed molecules through the perturbation of the electronic state of binding between the absorbed molecules and the solid surface. We have shown a direct relationship between the structural and electrical characteristics of the deposited oxide and the spectral contents of the energy source.

Mechanism of Amorphous Silica Film Formation from Tetraethoxysilane in Atomic Oxygen‐Induced Chemical Vapor Deposition

1998 ◽  
Vol 145 (8) ◽  
pp. 2866-2876 ◽  
Author(s):  
Aleksander M. Wróbel ◽  
Agnieszka Walkiewicz‐Pietrzykowska ◽  
Sunil Wickramanayaka ◽  
Yoshinori Hatanaka
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silica ◽  
Vapor Deposition ◽  
Atomic Oxygen ◽  
Film Formation ◽  
Chemical Vapor ◽  
Silica Film
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