Deposition of Oxide Based Advanced Electronic and Optical Materials by Rapid Isothermal Processing (RIP) Assisted Metalorganic Chemical Vapor Deposition (MOCVD)

1994 ◽  
Vol 342 ◽  
Author(s):  
J. Mavoori ◽  
R. Singh ◽  
R. Sharangpani ◽  
C. Gong ◽  
K. F. Poole ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Vacuum Ultraviolet ◽  
Chemical Vapor ◽  
Advanced Materials ◽  
Beneficial Effects ◽  
Temperature Deposition ◽  
Rapid Isothermal Processing ◽  
Metalorganic Chemical

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) is an ideal technique for the deposition of conducting and non-conducting oxide based thin film materials. In this paper we present our study of RIP assisted MOCVD for the low temperature deposition of a number of oxide based advanced materials which are useful for the development of the next generation of microelectronic and optoelectronic devices. We have designed several experiments to understand the role of photoeffects in RIP assisted MOCVD. The vacuum ultraviolet, ultraviolet and visible (λ ≤ 0.7–0.8μm) photons can have several beneficial effects including the enhancement of the surface reactions of the absorbed molecules through the perturbation of the electronic state of binding between the absorbed molecules and the solid surface. We have shown a direct relationship between the structural and electrical characteristics of the deposited oxide and the spectral contents of the energy source.

Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 1079-1082 ◽  
Author(s):  
Shiro Hino ◽  
Tomohiro Hatayama ◽  
Naruhisa Miura ◽  
Tatsuo Ozeki ◽  
Eisuke Tokumitsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Metalorganic Chemical

Low temperature deposition of HfO2 films on 4H-SiC(0001) substrates by pulse introduced metalorganic chemical vapor deposition (MOCVD) using tetrakis-diethylamido-hafnium [Hf[N(C2H5)2]4, (TDEAH)] and H2O has been investigated. HfO2 films with relatively low leakage current density of 10-4 A/cm2 were obtained even at a deposition temperature as low as 190 °C. We demonstrate that the HfO2/SiC interface, where the HfO2 was deposited at 190 °C, has lower interface state density than a typical thermally-grown SiO2/SiC interface. It is also shown by X-ray photoelectron spectroscopy (XPS) that the HfO2/SiC structure fabricated at 190 °C has lower SiOx count than the HfO2/SiC structure fabricated at 400 °C.

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