Mechanism of Amorphous Silica Film Formation from Tetraethoxysilane in Atomic Oxygen‐Induced Chemical Vapor Deposition

1998 ◽  
Vol 145 (8) ◽  
pp. 2866-2876 ◽  
Author(s):  
Aleksander M. Wróbel ◽  
Agnieszka Walkiewicz‐Pietrzykowska ◽  
Sunil Wickramanayaka ◽  
Yoshinori Hatanaka
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silica ◽  
Vapor Deposition ◽  
Atomic Oxygen ◽  
Film Formation ◽  
Chemical Vapor ◽  
Silica Film

Conversion of tetraethoxysilane (TEOS) to silica film-forming precursors in atomic oxygen-induced chemical vapor deposition

1996 ◽  
Vol 2 (6) ◽  
pp. 285-291 ◽  
Author(s):  
Aleksander M. Wróbel ◽  
Agnieszka Walkiewicz-Pietrzykowska ◽  
Marek Stasiak ◽  
Józef Kulpiúski
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atomic Oxygen ◽  
Chemical Vapor ◽  
Silica Film ◽  
Film Forming

Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor

MRS Advances ◽  
2016 ◽  
Vol 2 (29) ◽  
pp. 1533-1538 ◽  
Author(s):  
S. Ishihara ◽  
Y. Hibino ◽  
N. Sawamoto ◽  
T. Ohashi ◽  
K. Matsuura ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Film Formation ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Axis Orientation

ABSTRACTMolybdenum disulfide (MoS2) thin films were fabricated by two-step chemical vapor deposition (CVD) using (t-C4H9)2S2 and the effects of temperature, gas flow rate, and atmosphere on the formation were investigated in order to achieve high-speed low-temperature MoS2 film formation. From the results of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) investigations, it was confirmed that c-axis orientation of the pre-deposited Mo film has a significant involvement in the crystal orientation after the reaction low temperature sulfurization annealing and we successfully obtained 3 nm c-axis oriented MoS2 thin film. From the S/Mo ratios in the films, it was revealed that the sulfurization reaction proceeds faster with increase in the sulfurization temperature and the gas flow rate. Moreover, the sulfurization under the H2 atmosphere promotes decomposition reaction of (t-C4H9)2S2, which were confirmed by XPS and density functional theory (DFT) simulation.

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