Optical characterizations of photo‐induced chemical vapor deposition produced SiO2films in vacuum ultraviolet, ultraviolet, and visible region

1993 ◽  
Vol 74 (9) ◽  
pp. 5742-5747 ◽  
Author(s):  
Takeshi Kanashima ◽  
Ryoichi Nagayoshi ◽  
Masanori Okuyama ◽  
Yoshihiro Hamakawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Vacuum Ultraviolet ◽  
Visible Region ◽  
Chemical Vapor

The Optical Analysis and Application of Size-controllable Si Quantum Dots Fabricated by Multi-hollow Discharge Plasma Chemical Vapor Deposition

2012 ◽  
Vol 1426 ◽  
pp. 313-318
Author(s):  
Hyunwoong Seo ◽  
Yuting Wang ◽  
Giichiro Uchida ◽  
Kunihiro Kamataki ◽  
Naho Itagaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Visible Region ◽  
Chemical Vapor ◽  
Nano Particles ◽  
Optical Absorption Coefficient ◽  
Sensitized Solar Cells

ABSTRACTQuantum dot-sensitized solar cells (QDSCs) based on the multiple exciton generation (MEG) of QD are attractive in the field of photochemical cells because the improvement of conventional sensitized solar cells has been stagnant recently. The distinctive characteristics of QDs are their strong photo-response in the visible region and quantum confinement effects. Its theoretical efficiency is much higher than that of solar cell based on the single exciton generation (SEG). Moreover, QDs have tunable optical properties and band-gaps depending on the particle size. But QD materials widely used for QDSC have some disadvantages of toxicity and scarcity. On the other hand, Si as one of good QD materials is abundant and not toxic. Also, Si QD has high stability against light soaking and a high optical absorption coefficient due to quantum size effects. However, the research on Si QD is rare although the quantum effect of Si was already verified. It is one of reasons that the fabrication and collection of Si nano-particles are too difficult. Therefore, this work proposed multi-hollow plasma discharge chemical vapor deposition (CVD). It is possible to collect Si particles unlike conventional CVD and solve the problems of the wet process. The optical properties of Si particles were controlled by varying experimental conditions. In this work, Si particles were fabricated with various sizes and their characteristics were analyzed. Based on the results, Si QD was applied to Si QDSC.

Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition

2006 ◽  
Vol 321-323 ◽  
pp. 1687-1690 ◽  
Author(s):  
Hee Joon Kim ◽  
Dong Young Jang ◽  
Prem Kumar Shishodia ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Chemical Vapor ◽  
Zno Films ◽  
X Ray ◽  
Crystalline Films

In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

Deposition of Oxide Based Advanced Electronic and Optical Materials by Rapid Isothermal Processing (RIP) Assisted Metalorganic Chemical Vapor Deposition (MOCVD)

1994 ◽  
Vol 342 ◽  
Author(s):  
J. Mavoori ◽  
R. Singh ◽  
R. Sharangpani ◽  
C. Gong ◽  
K. F. Poole ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Vacuum Ultraviolet ◽  
Chemical Vapor ◽  
Advanced Materials ◽  
Beneficial Effects ◽  
Temperature Deposition ◽  
Rapid Isothermal Processing ◽  
Metalorganic Chemical

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) is an ideal technique for the deposition of conducting and non-conducting oxide based thin film materials. In this paper we present our study of RIP assisted MOCVD for the low temperature deposition of a number of oxide based advanced materials which are useful for the development of the next generation of microelectronic and optoelectronic devices. We have designed several experiments to understand the role of photoeffects in RIP assisted MOCVD. The vacuum ultraviolet, ultraviolet and visible (λ ≤ 0.7–0.8μm) photons can have several beneficial effects including the enhancement of the surface reactions of the absorbed molecules through the perturbation of the electronic state of binding between the absorbed molecules and the solid surface. We have shown a direct relationship between the structural and electrical characteristics of the deposited oxide and the spectral contents of the energy source.

A Novel TiO2 Film Catalyst — Preparation, Properties and Research on its Photocatalytic Oxidized Activity

1997 ◽  
Vol 497 ◽  
Author(s):  
Y. A. Cao ◽  
X. T. Zhang ◽  
L. Q. CHONG ◽  
D. Y. WANG ◽  
T. F. XIE ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Photocatalytic Activity ◽  
Chemical Vapor Deposition ◽  
Tio2 Film ◽  
Vapor Deposition ◽  
Visible Region ◽  
Chemical Vapor ◽  
High Photocatalytic Activity ◽  
Catalyst Preparation

ABSTRACTA new kind of TiO2 film catalyst was prepared by the Plasma-enhanced chemical vapor deposition (PECVD) method. The surface photovoltaic spectroscopy (SPS) results showed that its photoresponse was extended into the visible region. Photooxidation experiments showed that this kind of TiO2 film had high photocatalytic activity on degradation of phenol in aqueous solution. The influence of the thickness of TiO2 film on its photocatalytic activity was also discussed.

Silica film preparation by chemical vapor deposition using vacuum ultraviolet excimer lamps

2000 ◽  
Vol 168 (1-4) ◽  
pp. 37-40 ◽  
Author(s):  
K. Kurosawa ◽  
N. Takezoe ◽  
H. Yanagida ◽  
J. Miyano ◽  
Y. Motoyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Vacuum Ultraviolet ◽  
Chemical Vapor ◽  
Silica Film ◽  
Excimer Lamps ◽  
Film Preparation

Formation of Highly Transparent SiCN Films Prepared by HWCVD

2008 ◽  
Vol 54 ◽  
pp. 223-226
Author(s):  
Akira Izumi ◽  
T. Nakayamada
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Visible Region ◽  
Chemical Vapor ◽  
Ultraviolet Region ◽  
Hot Wire ◽  
Silicon Carbon ◽  
Source Materials

Highly transparent silicon carbon nitride (SiCN) films were prepared by hot wire chemical vapor deposition (HWCVD) at low temperature as low as 40oC. Hexamethyldisilazane (HMDS) and NH3 were used as the source materials for SiCN deposition. The SiCN film prepared by only HMDS was completely transparent in the wavelength of the visible region. Moreover, there was a little absorption in the ultraviolet region. However, SiCN prepared by using HMDS and NH3 showed almost transparent both visible and UV regions.

Chemical vapor deposition of aluminum nitride thin films

1992 ◽  
Vol 7 (7) ◽  
pp. 1679-1684 ◽  
Author(s):  
Roy G. Gordon ◽  
Umar Riaz ◽  
David M. Hoffman
Keyword(s):  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Chemical Vapor ◽  
Rutherford Backscattering ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Quartz Substrates

The atmospheric pressure chemical vapor deposition of aluminum nitride coatings from hexakis(dimethylamido)dialuminum, Al2(N(CH3)2)6, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, Rutherford backscattering, and forward recoil spectrometry. The films were deposited at 100–500 °C with growth rates up to 1500 Å/min. The films showed good adhesion to silicon, glass, and quartz substrates and were chemically inert. Rutherford backscattering analysis revealed that the N/Al ratio was 1.15 ± 0.05 for films deposited at 100–200 °C and 1.05 ± 0.05 for those deposited at 300–500 °C. Films deposited at 100–200 °C had refractive indexes in the range 1.65–1.80 whereas indexes for films deposited at 300–400 °C were 1.86–2.04. The films were transparent in the visible region. The optical bandgap varied from 5.0 eV for films deposited at 100 °C to 5.77 eV for those deposited at 500 °C. Films deposited at 100–200 °C were amorphous whereas those deposited at 300–500 °C were polycrystalline.

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