Trends and challenges in VLSI technology scaling towards 100 nm

2003 ◽  
Author(s):  
S. Rusu ◽  
M. Sachdev ◽  
C. Svensson ◽  
B. Nauta
Keyword(s):  
Technology Scaling ◽  
Vlsi Technology

Impact of VLSI technology scaling on HTOL

2012 ◽  
Author(s):  
Robert Kwasnick ◽  
Matthew Reilly ◽  
Jonathan Hatfield ◽  
Scott C. Johnson ◽  
Anisur Rahman
Keyword(s):  
Technology Scaling ◽  
Vlsi Technology

Application of Fast Laser Deprocessing Techniques in Physical Failure Analysis on SRAM Memory of Advance Technology

2014 ◽  
Author(s):  
H.H. Yap ◽  
P.K. Tan ◽  
G.R. Low ◽  
M.K. Dawood ◽  
H. Feng ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Integrated Circuit ◽  
Cost Effective ◽  
Tetraethyl Orthosilicate ◽  
Ic Design ◽  
Advance Technology ◽  
Defect Identification ◽  
Technology Scaling ◽  
And Function ◽  
Metal Layers

Abstract With technology scaling of semiconductor devices and further growth of the integrated circuit (IC) design and function complexity, it is necessary to increase the number of transistors in IC’s chip, layer stacks, and process steps. The last few metal layers of Back End Of Line (BEOL) are usually very thick metal lines (>4μm thickness) and protected with hard Silicon Dioxide (SiO2) material that is formed from (TetraEthyl OrthoSilicate) TEOS as Inter-Metal Dielectric (IMD). In order to perform physical failure analysis (PFA) on the logic or memory, the top thick metal layers must be removed. It is time-consuming to deprocess those thick metal and IMD layers using conventional PFA workflows. In this paper, the Fast Laser Deprocessing Technique (FLDT) is proposed to remove the BEOL thick and stubborn metal layers for memory PFA. The proposed FLDT is a cost-effective and quick way to deprocess a sample for defect identification in PFA.

Preparation of integrated chemical sensors using commercial VLSI technology

1987 ◽  
Vol 65 (5) ◽  
pp. 1072-1078 ◽  
Author(s):  
Paul G. Glavina ◽  
D. Jed Harrison
Keyword(s):  
Chemical Sensors ◽  
Linear Response ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Microelectrode Arrays ◽  
Drain Current ◽  
Cyclic Voltammetric ◽  
Design Rules ◽  
Vlsi Technology ◽  
Commercial Technology

The fabrication of ion sensitive field effect transistors (ISFET) and microelectrode arrays for use as chemical sensors using a commercial CMOS fabrication process is described. The commercial technology is readily available through the Canadian Microelectronics Corporation; however, several of the recommended design rules must be ignored in preparing chemical sensors using this process. The ISFET devices show near theoretical response to K+ in aqueous solution (55 mV slope) when coated with a K+ sensitive membrane. An extended gate ion sensitive device is presented which offers advantages in encapsulation of ISFET sensors. The source-drain current of both devices show a linear response to log [Formula: see text] in contrast to ISFETs previously reported that have high internal lead resistances. Al and poly-Si microelectrode arrays are fabricated commercially and then Pt is electrodeposited on the microelectrodes. The resulting arrays show good cyclic voltammetric response to Fe(CN)64− and Ru(NH3)63+ and are relatively durable.

Reliability of Metal Gate / High-k devices and its impact on CMOS technology scaling

MRS Advances ◽  
2017 ◽  
Vol 2 (52) ◽  
pp. 2973-2982 ◽  
Author(s):  
Andreas Kerber
Keyword(s):  
Dielectric Breakdown ◽  
Cmos Technology ◽  
Gate Stack ◽  
Leakage Currents ◽  
Technology Scaling ◽  
Device Scaling ◽  
Novel Device ◽  
Time Dependent Dielectric Breakdown ◽  
Bias Temperature Instability ◽  
High K

ABSTRACTMG/HK was introduced into CMOS technology and enabled scaling beyond the 45/32nm technology node. The change in gate stack from poly-Si/SiON to MG/HK introduced new reliability challenges like the positive bias temperature instability (PBTI) and stress induced leakage currents (SILC) in nFET devices which prompted thorough investigation to provide fundamental understanding of these degradation mechanisms and are nowadays well understood. The shift to a dual-layer gate stack also had a profound impact on the time dependent dielectric breakdown (TDDB) introducing a strong polarity dependence in the model parameter. As device scaling continues, stochastic modeling of variability, both at time zero and post stress due to BTI, becomes critical especially for SRAM circuit aging. As we migrate towards novel device architectures like bulk FinFET, SOI FinFETs, FDSOI and gate-all-around devices, impact of self-heating needs to be accounted for in reliability testing.In this paper we summarize the fundamentals of MG/HK reliability and discuss the reliability and characterization challenges related to the scaling of future CMOS technologies.

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