2012 IEEE International Reliability Physics Symposium (IRPS)
Latest Publications

TOTAL DOCUMENTS

190

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781457716805, 9781457716782, 9781457716799

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

The reliability approaches and requirements for IC component in telecom system

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241834 ◽

2012 ◽

Author(s):

Guofujun ◽

Zhoujiang ◽

Xieronghua

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FET arrays as CPI sensors for 3D stacking and packaging characterization

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241790 ◽

2012 ◽

Cited By ~ 15

Author(s):

A. Ivankovic ◽

V. Cherman ◽

G. Van der Plas ◽

B. Vandevelde ◽

G. Beyer ◽

...

Keyword(s):

3D Stacking

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TSV defects and TSV-induced circuit failures: The third dimension in test and design-for-test

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241859 ◽

2012 ◽

Cited By ~ 38

Author(s):

Krishnendu Chakrabarty ◽

Sergej Deutsch ◽

Himanshu Thapliyal ◽

Fangming Ye

Keyword(s):

Design For Test ◽

The Third ◽

Third Dimension

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Impact of interconnect length on BTI and HCI induced frequency degradation

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241798 ◽

2012 ◽

Cited By ~ 5

Author(s):

Xiaofei Wang ◽

Pulkit Jain ◽

Dong Jiao ◽

Chris H. Kim

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Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241780 ◽

2012 ◽

Cited By ~ 7

Author(s):

A. Sasikumar ◽

A. Arehart ◽

S. A. Ringel ◽

S. Kaun ◽

M. H. Wong ◽

...

Keyword(s):

Trap Formation ◽

Electric Stress ◽

Gan Hemts

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A comprehensive and critical re-assessment of 2-stage energy level NBTI model

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241933 ◽

2012 ◽

Cited By ~ 10

Author(s):

Shashank Gupta ◽

Binoy Jose ◽

Kaustubh Joshi ◽

Ankit Jain ◽

Muhammad Ashraful Alam ◽

...

Keyword(s):

Energy Level

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New insights into SILC-based life time extraction

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241854 ◽

2012 ◽

Cited By ~ 6

Author(s):

C.D. Young ◽

G. Bersuker ◽

M. Jo ◽

K. Matthews ◽

J. Huang ◽

...

Keyword(s):

Life Time

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Fundamental failure mechanisms limiting maximum voltage operation in AlGaN/GaN HEMTs

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241816 ◽

2012 ◽

Cited By ~ 7

Author(s):

Michael D. Hodge ◽

Ramakrishna Vetury ◽

Jeffrey B. Shealy

Keyword(s):

Failure Mechanisms ◽

Gan Hemts ◽

Maximum Voltage

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Generalized successive failure methodology for non-weibull distributions and its applications to SiO2 or high-k/SiO2 bilayer dielectrics and extrinsic failure mode

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241863 ◽

2012 ◽

Author(s):

Ernest Wu ◽

Jordi Sune ◽

Charles LaRow

Keyword(s):

Failure Mode ◽

Weibull Distributions ◽

High K

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Hot carrier degradation: From defect creation modeling to their impact on NMOS parameters

2012 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2012.6241945 ◽

2012 ◽

Cited By ~ 13

Author(s):

Y. Mamy Randriamihaja ◽

A. Zaka ◽

V. Huard ◽

M. Rafik ◽

D. Rideau ◽

...

Keyword(s):

Hot Carrier ◽

Defect Creation ◽

Hot Carrier Degradation

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2012 IEEE International Reliability Physics Symposium (IRPS)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

The reliability approaches and requirements for IC component in telecom system

FET arrays as CPI sensors for 3D stacking and packaging characterization

TSV defects and TSV-induced circuit failures: The third dimension in test and design-for-test

Impact of interconnect length on BTI and HCI induced frequency degradation

Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs

A comprehensive and critical re-assessment of 2-stage energy level NBTI model

New insights into SILC-based life time extraction

Fundamental failure mechanisms limiting maximum voltage operation in AlGaN/GaN HEMTs

Generalized successive failure methodology for non-weibull distributions and its applications to SiO2 or high-k/SiO2 bilayer dielectrics and extrinsic failure mode

Hot carrier degradation: From defect creation modeling to their impact on NMOS parameters

2012 IEEE International Reliability Physics Symposium (IRPS)
Latest Publications