Correction to "Trench Isolation Step-Induced (TRISI) Narrow Width Effect on MOSFET"

2002 ◽  
Vol 23 (11) ◽  
pp. 676-676 ◽  
Author(s):  
Youngmin Kim ◽  
S. Sridhar ◽  
A. Chatterjee
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pp. 575-577 ◽  
Author(s):  
Jongoh Kim ◽  
Taewoo Kim ◽  
Jaebeom Park ◽  
Woojin Kim ◽  
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2002 ◽  
Vol 23 (10) ◽  
pp. 600-602 ◽  
Author(s):  
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S. Sridhar ◽  
A. Chatterjee

1987 ◽  
Vol 34 (12) ◽  
pp. 2476-2484 ◽  
Author(s):  
L.A. Akers ◽  
M. Sugino ◽  
J.M. Ford
Keyword(s):  

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Author(s):  
S. S. Chung ◽  
D. C. Huang ◽  
C. S. Lai ◽  
C. H. Tsai ◽  
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H. Satoh ◽  
Y. Sharma ◽  
N. Hiromoto ◽  
H. Inokawa
Keyword(s):  

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Vol 34 (2) ◽  
pp. 356-360 ◽  
Author(s):  
G. Fuse ◽  
M. Fukumoto ◽  
A. Shinohara ◽  
S. Odanaka ◽  
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