Performance of a near-infrared GaAs metal-semiconductor-metal (MSM) photodetector with islands

1988 ◽  
Vol 9 (9) ◽  
pp. 485-487 ◽  
Author(s):  
W.C. Koscielniak ◽  
R.M. Kolbas ◽  
M.A. Littlejohn
Keyword(s):  
Near Infrared ◽  
Metal Semiconductor Metal ◽  
Msm Photodetector

scholarly journals Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2248 ◽  
Author(s):  
Hadi Mahmodi ◽  
Md Hashim ◽  
Tetsuo Soga ◽  
Salman Alrokayan ◽  
Haseeb Khan ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Near Infrared ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Infrared Region ◽  
Alloy Formation ◽  
Phase Mixing ◽  
Si Substrates ◽  
Msm Photodetector

In this work, nanocrystalline Ge1−xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C, 400 °C, and 450 °C, for 10 s. Then, the effect of thermal annealing on the morphological, structural, and optical characteristics of the synthesized Ge1−xSnx alloys were investigated. The nanocrystalline Ge1−xSnx formation was revealed by high-resolution X-ray diffraction (HR-XRD) measurements, which showed the orientation of (111). Raman results showed that phonon intensities of the Ge-Ge vibrations were improved with an increase in the annealing temperature. The results evidently showed that raising the annealing temperature led to improvements in the crystalline quality of the layers. It was demonstrated that Ge-Sn solid-phase mixing had occurred at a low temperature of 400 °C, which led to the creation of a Ge1−xSnx alloy. In addition, spectral photo-responsivity of a fabricated Ge1−xSnx metal-semiconductor-metal (MSM) photodetector exhibited its extending wavelength into the near-infrared region (820 nm).

Growth and Characterization of Tin Sulphide Nanostructured Thin Film by Chemical Bath Deposition for Near-Infrared Photodetector Application

2019 ◽  
Vol 290 ◽  
pp. 220-224 ◽  
Author(s):  
Mohamed S. Mahdi ◽  
Kamarulazizi Ibrahim ◽  
Naser Mahmoud Ahmed ◽  
Arshad Hmood ◽  
Shrook A. Azzez
Keyword(s):  
Thin Film ◽  
Chemical Bath Deposition ◽  
Near Infrared ◽  
Morphological Characteristics ◽  
Trisodium Citrate ◽  
Light Illumination ◽  
X Ray Diffraction ◽  
Nanostructured Thin Film ◽  
Complex Agent ◽  
Metal Semiconductor Metal

This study involves synthesizing of nanostructured tin sulphide (SnS) thin film on a glass substrate by chemical bath deposition technique. SnS film was prepared using non-toxic trisodium citrate (TSC) as a complex agent. The structural and morphological characteristics of the film were characterized by using X-ray diffraction (XRD), optical field emission scanning electron microscopy (FESEM). The XRD pattern confirmed an orthorhombic structure. The FESEM image revealed nanoflakes of the as-prepared SnS thin film. Moreover, near-infrared (NIR) metal semiconductor metal photodetector, which exhibited good photoresponse characteristics under (750 nm) light illumination was fabricated. The photoresponse characteristics also were investigated at different illumination power densities. The photodetector revealed excellent reproducibility and stability characteristics.

Routing and photodetection in subwavelength plasmonic slot waveguides

Nanophotonics ◽  
2012 ◽  
Vol 1 (1) ◽  
pp. 9-16 ◽  
Author(s):  
Dany-Sebastien Ly-Gagnon ◽  
Krishna C. Balram ◽  
Justin S. White ◽  
Pierre Wahl ◽  
Mark L. Brongersma ◽  
...  
Keyword(s):  
Photonic Devices ◽  
Information Storage ◽  
Slot Waveguide ◽  
Plasmonic Waveguides ◽  
Cross Sectional ◽  
Practical Applications ◽  
Metal Semiconductor Metal ◽  
Fabry Perot ◽  
Msm Photodetector ◽  
Integrated Detection

AbstractThe ability to manipulate light at deeply sub-wavelength scales opens a broad range of research possibilities and practical applications. In this paper, we go beyond recent demonstrations of active photonic devices coupled to planar plasmonic waveguides and demonstrate a photodetector linked to a two conductor metallic slot waveguide that supports a mode with a minute cross-sectional area of ∼λ2/100. We demonstrate propagation lengths of ∼10λ (at 850 nm), routing around 90° bends and integrated detection with a metal-semiconductor-metal (MSM) photodetector. We show polarization selective excitation of the slot mode and measure its propagation characteristics by studying the Fabry-Perot oscillations in the photocurrent spectra from the waveguide-coupled detector. Our results demonstrate the practicality of transferring one of the most successful microwave and RF waveguide technologies to the optical domain, opening up many opportunities in areas such as biosensing, information storage and communication.

Near-infrared metal–semiconductor–metal photodetector integrated on silicon

2001 ◽  
Vol 391 (1) ◽  
pp. 138-142 ◽  
Author(s):  
R. Calarco ◽  
M. Fiordelisi ◽  
S. Lagomarsino ◽  
F. Scarinci
Keyword(s):  
Near Infrared ◽  
Metal Semiconductor Metal

Proton-induced transient effects in a metal-semiconductor-metal (MSM) photodetector for optical-based data transfer

1998 ◽  
Vol 45 (6) ◽  
pp. 2842-2848 ◽  
Author(s):  
C.J. Marshall ◽  
P.W. Marshall ◽  
M.A. Carts ◽  
R.A. Reed ◽  
K.A. LaBel
Keyword(s):  
Data Transfer ◽  
Transient Effects ◽  
Metal Semiconductor Metal ◽  
Msm Photodetector
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