Electrical and Optical Transient Behavior of n-GaN Metal-Semiconductor-Metal (MSM) Photodetector

2013 ◽  
Vol 2 (3) ◽  
pp. 222-226 ◽  
Author(s):  
Z. Muhammad ◽  
T. Munir ◽  
S. Naseem
Keyword(s):  
Transient Behavior ◽  
Metal Semiconductor Metal ◽  
Msm Photodetector ◽  
Optical Transient

Routing and photodetection in subwavelength plasmonic slot waveguides

Nanophotonics ◽  
2012 ◽  
Vol 1 (1) ◽  
pp. 9-16 ◽  
Author(s):  
Dany-Sebastien Ly-Gagnon ◽  
Krishna C. Balram ◽  
Justin S. White ◽  
Pierre Wahl ◽  
Mark L. Brongersma ◽  
...  
Keyword(s):  
Photonic Devices ◽  
Information Storage ◽  
Slot Waveguide ◽  
Plasmonic Waveguides ◽  
Cross Sectional ◽  
Practical Applications ◽  
Metal Semiconductor Metal ◽  
Fabry Perot ◽  
Msm Photodetector ◽  
Integrated Detection

AbstractThe ability to manipulate light at deeply sub-wavelength scales opens a broad range of research possibilities and practical applications. In this paper, we go beyond recent demonstrations of active photonic devices coupled to planar plasmonic waveguides and demonstrate a photodetector linked to a two conductor metallic slot waveguide that supports a mode with a minute cross-sectional area of ∼λ2/100. We demonstrate propagation lengths of ∼10λ (at 850 nm), routing around 90° bends and integrated detection with a metal-semiconductor-metal (MSM) photodetector. We show polarization selective excitation of the slot mode and measure its propagation characteristics by studying the Fabry-Perot oscillations in the photocurrent spectra from the waveguide-coupled detector. Our results demonstrate the practicality of transferring one of the most successful microwave and RF waveguide technologies to the optical domain, opening up many opportunities in areas such as biosensing, information storage and communication.

Performance of a near-infrared GaAs metal-semiconductor-metal (MSM) photodetector with islands

1988 ◽  
Vol 9 (9) ◽  
pp. 485-487 ◽  
Author(s):  
W.C. Koscielniak ◽  
R.M. Kolbas ◽  
M.A. Littlejohn
Keyword(s):  
Near Infrared ◽  
Metal Semiconductor Metal ◽  
Msm Photodetector

Proton-induced transient effects in a metal-semiconductor-metal (MSM) photodetector for optical-based data transfer

1998 ◽  
Vol 45 (6) ◽  
pp. 2842-2848 ◽  
Author(s):  
C.J. Marshall ◽  
P.W. Marshall ◽  
M.A. Carts ◽  
R.A. Reed ◽  
K.A. LaBel
Keyword(s):  
Data Transfer ◽  
Transient Effects ◽  
Metal Semiconductor Metal ◽  
Msm Photodetector

scholarly journals Responsivity Dependent Anodization Current Density of Nanoporous Silicon Based MSM Photodetector

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Batool Eneaze B. Al-Jumaili ◽  
Zainal A. Talib ◽  
Asmiet Ramizy ◽  
Naser M. Ahmed ◽  
L. Y. Josephine ◽  
...  
Keyword(s):  
Current Density ◽  
High Speed ◽  
Fast Response ◽  
Density Variation ◽  
Nanoporous Silicon ◽  
Barrier Formation ◽  
Metal Semiconductor Metal ◽  
Msm Photodetector ◽  
Scherrer Formula ◽  
Silicon Based

Achieving a cheap and ultrafast metal-semiconductor-metal (MSM) photodetector (PD) for very high-speed communications is ever-demanding. We report the influence of anodization current density variation on the response of nanoporous silicon (NPSi) based MSM PD with platinum (Pt) contact electrodes. Such NPSi samples are grown from n-type Si (100) wafer using photoelectrochemical etching with three different anodization current densities. FESEM images of as-prepared samples revealed the existence of discrete pores with spherical and square-like shapes. XRD pattern displayed the growth of nanocrystals with (311) lattice orientation. The nanocrystallite sizes obtained using Scherrer formula are found to be between 20.8 nm and 28.6 nm. The observed rectifying behavior in theI-Vcharacteristics is ascribed to the Pt/PSi/n-Si Schottky barrier formation, where the barrier height at the Pt/PSi interface is estimated to be 0.69 eV. Furthermore, this Pt/PSi/Pt MSM PD achieved maximum responsivity of 0.17 A/W and quantum efficiency as much as 39.3%. The photoresponse of this NPSi based MSM PD demonstrated excellent repeatability, fast response, and enhanced saturation current with increasing anodization current density.

Analysis of a GaAs metal-semiconductor-metal (MSM) photodetector with 0.1- mu m finger spacing

1989 ◽  
Vol 10 (5) ◽  
pp. 209-211 ◽  
Author(s):  
W.C. Koscielniak ◽  
M.A. Littlejohn ◽  
J.-L. Pelouard
Keyword(s):  
Metal Semiconductor Metal ◽  
Msm Photodetector

Optimization of metal-semiconductor-metal (MSM) photodetector arrays integrated with polyimide waveguides

1997 ◽  
Author(s):  
Claire L. Callender ◽  
Lucie Robitaille ◽  
Julian P. Noad ◽  
Francois L. Gouin ◽  
Carlos Almeida
Keyword(s):  
Metal Semiconductor Metal ◽  
Msm Photodetector ◽  
Photodetector Arrays

scholarly journals Fabrication of Ti-Si-Ti Metal-Semiconductor-Metal Photodetectors Using Low Temperature Rapid Thermal Annealing

2007 ◽  
Vol 2 (2) ◽  
pp. 85-88
Author(s):  
Ricardo L. Ohta ◽  
Carlos E. Viana ◽  
Nilton I. Morimoto ◽  
Ben-Hur V. Borges
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dark Current ◽  
Low Temperatures ◽  
Interfacial Layer ◽  
Annealing Temperature ◽  
Metal Semiconductor Metal ◽  
Order Of Magnitude ◽  
Msm Photodetector ◽  
Temperature Rapid Thermal Annealing

The electrical properties of Ti-Si-Ti Metal-Semiconductor-Metal (MSM) photodetector were studied as a function of annealing temperature, using Rapid Thermal Annealing (RTA) process. Low temperatures were used at the RTA (200-350°C) in order to avoid the formation of silicides.We observed a decrease in the dark current on samples annealed between 200 and 300°C. The lowest dark current was obtained in the sample annealed at 250°C (4.8 nA), which is one order of magnitude lower than as-deposited sample (53.5 nA). The sample annealed at 350°C had an increase in dark current (82.9 nA). This behavior of the dark current can be explained by the increase in the barrier height at 200-300°C annealing temperature range, due to increase of the thickness of the amorphous interdiffused Ti-Si interfacial layer, and decrease in the barrier value at sample annealed at 350°C, due to pre formation of C49 TiSi2.

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