Pengembangan Pembelajaran Daring Melalui Media Interaktif Simulasi Elektronik (MISE) pada Mata Kuliah Ekonomi Makro

There are two objectives achieved in this research, including: 1) developing tools for developing online learning through electronic simulation interactive media in macroeconomics courses; and 2) measuring or knowing the level of accuracy of Online Learning Development Through Electronic Simulation Interactive Media in Economics Courses. The research method used is a Design Based Research (DBR) approach and 22 students of the Faculty of Education and Science of the Economic Education Study Program at Universitas Batanghari as research subjects. There are four stages in the Design Based Research (DBR) used, namely 1) stage I Analysis of Problems in the field; 2) Phase II Development of Online Learning Device Design and Prototype Through MISE; 3) stage III. Testing and Completing Prototypes of Online Learning Tools Through MISE; and 4) stage IV Reflection on Learning Device Products. Data collection techniques are through observation, in-depth interviews, and Focus Group Discussion (FGD). Analysis of the data used in processing the results of this research data using qualitative, quantitative, and mix method analysis. This research produces an Electronic Simulation Interactive Media (MISE) learning product that is packaged in the form of the Adobe Flash Professional CS6 Software application for macroeconomics courses with an accuracy level using the validation test of material experts and interactive learning media experts which can be seen that the results of material expert validation are 4 .5 or good and the result of media expert validation is 4.44 or good.

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.