Improving the Dark Current Response of Monocrystalline N-SiMetal Semiconductor-Metal (MSM) Photodetector by Chemical and Thermal Treatment

2010 ◽  
Author(s):  
M. Z. Mohd Yusoff ◽  
M. R. Hashim ◽  
A. K. Yahya ◽  
Shah Alam
Keyword(s):  
Thermal Treatment ◽  
Dark Current ◽  
Current Response ◽  
Metal Semiconductor Metal ◽  
Msm Photodetector

scholarly journals Fabrication of Ti-Si-Ti Metal-Semiconductor-Metal Photodetectors Using Low Temperature Rapid Thermal Annealing

2007 ◽  
Vol 2 (2) ◽  
pp. 85-88
Author(s):  
Ricardo L. Ohta ◽  
Carlos E. Viana ◽  
Nilton I. Morimoto ◽  
Ben-Hur V. Borges
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dark Current ◽  
Low Temperatures ◽  
Interfacial Layer ◽  
Annealing Temperature ◽  
Metal Semiconductor Metal ◽  
Order Of Magnitude ◽  
Msm Photodetector ◽  
Temperature Rapid Thermal Annealing

The electrical properties of Ti-Si-Ti Metal-Semiconductor-Metal (MSM) photodetector were studied as a function of annealing temperature, using Rapid Thermal Annealing (RTA) process. Low temperatures were used at the RTA (200-350°C) in order to avoid the formation of silicides.We observed a decrease in the dark current on samples annealed between 200 and 300°C. The lowest dark current was obtained in the sample annealed at 250°C (4.8 nA), which is one order of magnitude lower than as-deposited sample (53.5 nA). The sample annealed at 350°C had an increase in dark current (82.9 nA). This behavior of the dark current can be explained by the increase in the barrier height at 200-300°C annealing temperature range, due to increase of the thickness of the amorphous interdiffused Ti-Si interfacial layer, and decrease in the barrier value at sample annealed at 350°C, due to pre formation of C49 TiSi2.

scholarly journals MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Lingzhi Luo ◽  
Yixuan Huang ◽  
Keming Cheng ◽  
Abdullah Alhassan ◽  
Mahdi Alqahtani ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
High Performance ◽  
Van Der Waals ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Potential Candidate ◽  
Patterned Substrate ◽  
Metal Semiconductor Metal ◽  
Msm Photodetector

AbstractA MXene-GaN-MXene based multiple quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced by three orders of magnitude and its noise spectral intensity shows distinct improvement compared with the traditional Cr/Au–GaN–Cr/Au MSM photodetector. The improved device performance is attributed to low-defect MXene-GaN van der Waals interfaces. Thanks to the high quality MXene-GaN interfaces, it is possible to verify that the patterned substrate can locally improve both light extraction and photocurrent collection. The measured responsivity and specific detectivity reach as high as 64.6 A/W and 1.93 × 1012 Jones, respectively, making it a potential candidate for underwater optical detection and communication. The simple fabrication of MXene-GaN-MXene photodetectors spearheaded the way to high performance photodetection by combining the advantages of emerging 2D MXene materials with the conventional III-V materials.

scholarly journals Suppression of dark current in GeO_x-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation

2015 ◽  
Vol 23 (13) ◽  
pp. 16967 ◽  
Author(s):  
Jian Kang ◽  
Rui Zhang ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Dark Current ◽  
Metal Semiconductor Metal

Reducing dark current in a high-speed si-based interdigitated trench-electrode msm photodetector

2003 ◽  
Vol 50 (5) ◽  
pp. 1306-1313 ◽  
Author(s):  
Cha-Shin Lin ◽  
Yun-Chen Chang ◽  
Rong-Hwei Yeh ◽  
Jyh-Wong Hong
Keyword(s):  
Dark Current ◽  
High Speed ◽  
Msm Photodetector

Routing and photodetection in subwavelength plasmonic slot waveguides

Nanophotonics ◽  
2012 ◽  
Vol 1 (1) ◽  
pp. 9-16 ◽  
Author(s):  
Dany-Sebastien Ly-Gagnon ◽  
Krishna C. Balram ◽  
Justin S. White ◽  
Pierre Wahl ◽  
Mark L. Brongersma ◽  
...  
Keyword(s):  
Photonic Devices ◽  
Information Storage ◽  
Slot Waveguide ◽  
Plasmonic Waveguides ◽  
Cross Sectional ◽  
Practical Applications ◽  
Metal Semiconductor Metal ◽  
Fabry Perot ◽  
Msm Photodetector ◽  
Integrated Detection

AbstractThe ability to manipulate light at deeply sub-wavelength scales opens a broad range of research possibilities and practical applications. In this paper, we go beyond recent demonstrations of active photonic devices coupled to planar plasmonic waveguides and demonstrate a photodetector linked to a two conductor metallic slot waveguide that supports a mode with a minute cross-sectional area of ∼λ2/100. We demonstrate propagation lengths of ∼10λ (at 850 nm), routing around 90° bends and integrated detection with a metal-semiconductor-metal (MSM) photodetector. We show polarization selective excitation of the slot mode and measure its propagation characteristics by studying the Fabry-Perot oscillations in the photocurrent spectra from the waveguide-coupled detector. Our results demonstrate the practicality of transferring one of the most successful microwave and RF waveguide technologies to the optical domain, opening up many opportunities in areas such as biosensing, information storage and communication.

Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors

2018 ◽  
Vol 498 ◽  
pp. 35-42 ◽  
Author(s):  
Shashwat Rathkanthiwar ◽  
Anisha Kalra ◽  
Rangarajan Muralidharan ◽  
Digbijoy N. Nath ◽  
Srinivasan Raghavan
Keyword(s):  
Screw Dislocation ◽  
Dark Current ◽  
Metal Semiconductor Metal ◽  
Solar Blind

Surface Passivation and the Ultrafast Optical Response of Low-Temperature-Grown GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
H. H. Wang ◽  
J. F. Whitaker ◽  
K. Al-Hemyari ◽  
S. L. Williamson
Keyword(s):  
Low Temperature ◽  
Dark Current ◽  
Surface Passivation ◽  
Surface States ◽  
Time Response ◽  
Temporal Response ◽  
Dc Voltage ◽  
Ultrafast Optical ◽  
Metal Semiconductor Metal ◽  
Low Temperature Grown Gaas

AbstractMetal-semiconductor-metal photodetectors fabricated using low-temperature-grown GaAs have been passivated using AlGaAs cap layers in order to understand the influence of surface states and fields on the properties of these detectors. It has been found that passivation has little effect on the time response or persistent photoconductive tails associated with the detectors, but that responsivity and dark current can be enhanced in certain circumstances. The dependence of the temporal response on optical fluence and dc-voltage bias were observed for both passivated and unpassivated detectors.

Mapping of Defects in Metal-Semiconductor-Metal (MSM) Detectors in Hg1−xCdxTe by Nuclear Microprobe

1993 ◽  
Vol 302 ◽  
Author(s):  
Patrick W. Leech ◽  
Sean P. Dooley ◽  
David N. Jamieson
Keyword(s):  
Active Region ◽  
Dark Current ◽  
Linear Growth ◽  
Cdte Layer ◽  
Nuclear Microprobe ◽  
High Quality ◽  
Growth Defects ◽  
Metal Semiconductor Metal ◽  
Contrast Microscopy ◽  
Equivalent Conditions

ABSTRACTThe incidence of compositional and structural inhomogenieties in MSM detectors based on Hg1−xCdxTe/GaAs and Hg1−xCdxTe/GaAs/Si has been examined by nuclear microprobe. With a 2 MeV He+ beam focussed to ≥5 μm, the microprobe has demonstrated the capability for RBS channelling in the active region of a Hg1−xCdxTe device and the imaging of defects by Channelling Contrast Microscopy (CCM). A series of linear growth defects in some Hg1−xCdxTe devices were identified using CCM. The channelling RBS spectra from these regions have shown an increase in χmin compared with the surrounding high quality crystal. The occurence of these defects was associated with a degradation in the performance of affected devices in an array. RBS spectra have also revealed the presence of an anomalous CdTe layer, correlating with a significant reduction in dark current and increase in breakdown voltage of these devices. RBS channelling of individual devices has identified differences in χmin between arrays which were prepared under equivalent conditions of growth and processing.

Performance of a near-infrared GaAs metal-semiconductor-metal (MSM) photodetector with islands

1988 ◽  
Vol 9 (9) ◽  
pp. 485-487 ◽  
Author(s):  
W.C. Koscielniak ◽  
R.M. Kolbas ◽  
M.A. Littlejohn
Keyword(s):  
Near Infrared ◽  
Metal Semiconductor Metal ◽  
Msm Photodetector
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