A novel flip-chip interconnection technique using solder bumps for high-speed photoreceivers

1990 ◽  
Vol 8 (9) ◽  
pp. 1323-1327 ◽  
Author(s):  
K. Katsura ◽  
T. Hayashi ◽  
F. Ohira ◽  
S. Hata ◽  
K. Iwashita
Keyword(s):  
High Speed ◽  
Flip Chip ◽  
Solder Bumps

Flip Chip Underfill RF Characterization

2019 ◽  
Vol 2019 (1) ◽  
pp. 000243-000247
Author(s):  
Robert B. Paul ◽  
A. Ege Engin ◽  
Jerry Aguirre
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
High Speed ◽  
Flip Chip ◽  
Power Integrity ◽  
Cavity Resonators ◽  
Dielectric Characterization ◽  
Noise Coupling ◽  
Solder Bumps ◽  
Underfill Material

Abstract To develop reliable high-speed packages, characterization of the underfill material used in the flip-chip process has become of greater importance. The underfill, typically an epoxy resin-based material, offers thermal and structural benefits for the integrated circuit (IC) on package. With so many inputs and outputs (IOs) in close proximity to one another, the integrated circuits on package can have unexpected signal and power integrity issues. Furthermore, chip packages can support signals only up to the frequency where noise coupling (e.g., crosstalk, switching noise, etc.) leads to the malfunctioning of the system. Vertical interconnects, such as vias and solder bumps, are major sources of noise coupling. Inserting ground references between every signal net is not practical. For the solder bumps, the noise coupling depends on the permittivity of the underfill material. Therefore, characterizing the permittivity of the underfill material helps in predicting signal and power integrity issues. Such liquid or semi-viscous materials are commonly characterized from a simple fringe capacitance model of an open-ended coaxial probe immersed in the material. The open-ended coaxial method, however, is not as accurate as resonator-based methods. There is a need for a methodology to accurately extract the permittivity of liquid or semi-viscous materials at high frequencies. The proposed method uses solid walled cavity resonators, where the resonator is filled with the underfill material and cured. Dielectric characterization is a complex process, where the physical characteristics of the cavities must be known or accurately measured. This includes the conductivity of the conductors, roughness of the conductors, the dimensions of the cavity, and the port pin locations. This paper discusses some of the challenges that are encountered when characterizing dielectrics with cavity resonators. This characterization methodology can also be used to characterize other materials of interest.

Development of Lead Free Plating Chemical for Various Applications

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 000944-000967
Author(s):  
Takeshi Hatta ◽  
Atsushi Ishikawa ◽  
Takuma Katase ◽  
Akihiro Masuda
Keyword(s):  
Chemical Stability ◽  
High Speed ◽  
Flip Chip ◽  
New Technologies ◽  
High Reliability ◽  
Lead Free ◽  
Current Status ◽  
Chip Technology ◽  
Solder Bumps ◽  
Pure Sn

Flip chip connection has been applied to a lot of applications to shorten the connection length for high performance. Solder bumping is one of the key technologies for flip chip connection, and its quality strongly brings large impact on the reliability after packaging. Electroplating is one of the methods to form solder bumps. And Sn-Ag is considered as the first candidate of lead free alloy for electroplating method. We have released Sn-Ag plating chemical and it has been used by many customers in the world. In the future, flip chip technology will progress to further miniaturization and high integration with the new technologies such as Cu pillar and Through Silicon Via (TSV). At that time, further variations of alloys are necessary for electroplating method to meet various requirements. Even for Sn-Ag plating chemical, higher plating rate is required to improve productivity in mass production. In this time, we have developed new Sn-Ag high speed plating chemical based on our conventional technology. Furthermore, we have succeeded to develop Pure Sn and Sn-Cu chemicals for bumping method to meet customer's requirement. Sn-Cu is considered as a good candidate for bumping alloy to achieve high reliability, but the chemical stability is not so good. Therefore, we successfully modified the Sn-Cu chemical and extended chemical stability. We will update our current status about high speed Sn-Ag plating chemical and other chemicals like Sn-Cu and pure Sn in this time. By using these binary alloy chemicals, we are able to produce Sn-Ag-Cu solder bumps by stacking Sn-Ag and Sn-Cu. And it can bring further variation for bumping alloys.

Novel flip-chip interconnection technique using solder bumps for high speed photoreceivers

1990 ◽  
Author(s):  
K. KATSURA ◽  
T. HAYASHI ◽  
F. OHIRA ◽  
S. HATA ◽  
K. IWASHITA
Keyword(s):  
High Speed ◽  
Flip Chip ◽  
Solder Bumps

Electromigration Reliability of Glass Ceramic Multilayer Substrate with Various Surface Finishes

2012 ◽  
Vol 2012 (1) ◽  
pp. 000503-000509
Author(s):  
Hiroshi Matsumoto ◽  
Akira Wakazaki ◽  
Shingo Sato ◽  
Takashi Okunosono ◽  
Chihiro Makihara
Keyword(s):  
Life Cycle ◽  
Current Density ◽  
Glass Ceramic ◽  
High Speed ◽  
Flip Chip ◽  
Solder Joints ◽  
Diffusion Rate ◽  
Ceramic Substrate ◽  
Solder Bumps ◽  
Glass Ceramic Substrate

The process speed of high-end servers and supercomputers are steadily increasing. As a result, the backbone of the high speed processing, such as high-end LSI (flip-chip type), and associated substrate circuits is also becoming more dense and miniaturized, while supporting higher current densities. However, recent studies indicate that the higher current density triggers an electromigration (EM) at the solder bumps connecting the under bump metallurgy (UBM) of the flip-chip pad (e.g. Ni) and substrate pads (e.g. Ni/Au). This electromigration leads to voids within the solder joints, which may result in an open circuit. As of result, the life-cycle of the packaged devices is shortened. Thus solution to the EM issue is critical. To respond to such concerns, we have studied the mechanism of the void development, by closely examining differences in diffusion rate among the connective metals - within the pads and the solders. We have mitigated the EM occurrence by reducing the differences in diffusion rate by utilizing high purity Cu for the substrate metallization pads, Cu exhibits a diffusion rate similar to Sn used in solder bumps. Also, solder wettability was improved by utilizing a solder on pad (SOP) construction. As of result we were able to successfully demonstrate an improved life-cycle of the flip-chip solder joints, while accommodating a higher current density. Furthermore, a glass ceramic substrate was used for our study. Since this particular glass ceramic substrate has a coefficient of thermal expansion of 11.8ppm/K, there is an improvement in 1st and 2nd level reliabilities associated with thermal stress from device heat generation. At the same time, it possesses a dielectric constant of 5.8, which is conductive with superior electrical performance (high speed and high frequency). Thus, this glass ceramic substrate is capable of supporting increases in current density, while sustaining high reliability.

The Use of Precision Selective Area Milling for Failure Analysis of Flip-Chip Packages

2002 ◽  
Author(s):  
George F. Gaut
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Solder Bump ◽  
Selective Area ◽  
Fill Material ◽  
Solder Bumps ◽  
Time Required

Abstract Access to the solder bump and under-fill material of flip-chip devices has presented a new problem for failure analysts. The under-fill and solder bumps have also added a new source for failure causes. A new tool has become available that can reduce the time required to analyze this area of a flip-chip package. By using precision selective area milling it is possible to remove material (die or PCB) that will allow other tools to expose the source of the failure.

scholarly journals Demonstration of fine pitch FCOB (Flip Chip on Board) assembly based on solder bumps at Fermilab

2009 ◽  
Vol 4 (11) ◽  
pp. T11001-T11001
Author(s):  
E Skup ◽  
M Trimpl ◽  
R Yarema ◽  
J C Yun
Keyword(s):  
Flip Chip ◽  
Fine Pitch ◽  
Solder Bumps

Defect Detection of Flip Chip Solder Bumps Through Local Temporal Coherence Analysis of Laser Ultrasound Signals

2007 ◽  
Author(s):  
Jin Yang ◽  
Charles Ume
Keyword(s):  
Defect Detection ◽  
Flip Chip ◽  
Solder Bump ◽  
Temporal Coherence ◽  
Coherence Analysis ◽  
Laser Ultrasound ◽  
Surface Mount ◽  
Flip Chips ◽  
Solder Bumps ◽  
Ultrasound Signals

Microelectronics packaging technology has evolved from through-hole and bulk configuration to surface-mount and small-profile ones. In surface mount packaging, such as flip chips, chip scale packages (CSP), and ball grid arrays (BGA), chips/packages are attached to the substrates or printed wiring boards (PWB) using solder bump interconnections. Solder bumps, which are hidden between the device and the substrate/board, are no longer visible for inspection. A novel solder bump inspection system has been developed using laser ultrasound and interferometric techniques. This system has been successfully applied to detect solder bump defects including missing, misaligned, open, and cracked solder bumps in flip chips, and chip scale packages. This system uses a pulsed Nd:YAG laser to induce ultrasound in the thermoelastic regime and the transient out-of-plane displacement response on the device surface is measured using the interferometric technique. In this paper, local temporal coherence (LTC) analysis of laser ultrasound signals is presented and compared to previous signal processing methods, including Error Ratio and Correlation Coefficient. The results show that local temporal coherence analysis increases measurement sensitivity for inspecting solder bumps in packaged electronic devices. Laser ultrasound inspection results are also compared with X-ray and C-mode Scanning Acoustic Microscopy (CSAM) results. In particular, this paper discusses defect detection for a 6.35mm×6.35mm×0.6mm PB18 flip chip and a flip chip (SiMAF) with 24 lead-free solder bumps. These two flip chip specimens are both non-underfilled.

High-speed flip-chip InP/InGaAs avalanche photodiodes with ultralow capacitance and large gain-bandwidth products

1991 ◽  
Vol 3 (12) ◽  
pp. 1115-1116 ◽  
Author(s):  
Y. Kito ◽  
H. Kuwatsuka ◽  
T. Kumai ◽  
M. Makiuchi ◽  
T. Uchida ◽  
...  
Keyword(s):  
High Speed ◽  
Flip Chip ◽  
Avalanche Photodiodes ◽  
Gain Bandwidth ◽  
Large Gain
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