High-speed flip-chip InP/InGaAs avalanche photodiodes with ultralow capacitance and large gain-bandwidth products

1991 ◽  
Vol 3 (12) ◽  
pp. 1115-1116 ◽  
Author(s):  
Y. Kito ◽  
H. Kuwatsuka ◽  
T. Kumai ◽  
M. Makiuchi ◽  
T. Uchida ◽  
...  
Keyword(s):  
High Speed ◽  
Flip Chip ◽  
Avalanche Photodiodes ◽  
Gain Bandwidth ◽  
Large Gain

HIGH SPEED RESONANT-CAVITY InGaAs/InAlAs AVALANCHE PHOTODIODES

2000 ◽  
Vol 10 (01) ◽  
pp. 327-337
Author(s):  
J. C. CAMPBELL ◽  
H. NIE ◽  
C. LENOX ◽  
G. KINSEY ◽  
P. YUAN ◽  
...  
Keyword(s):  
High Speed ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Resonant Cavity ◽  
Multiple Quantum Well ◽  
Low Noise ◽  
Excess Noise ◽  
Multiple Quantum ◽  
Gain Bandwidth ◽  
Unity Gain

The evolution of long-haul optical fiber telecommunications systems to bit rates greater than 10 GB/s has created a need for avalanche photodiodes (APDs) with higher bandwidths and higher gain-bandwidth products than are currently available. It is also desirable to maintain good quantum efficiency and low excess noise. At present, the best performance (f3dB ~ 15 GHz at low gain and gain-bandwidth product ~ 150 GHz) has been achieved by AlInAs/InGaAs(P) multiple quantum well (MQW) APDs. In this paper we report a resonant-cavity InAlAs/InGaAs APD that operates near 1.55 μm. These APDs have achieved very low noise (k equivalent to 0.18) as a result of the very thin multiplication regions that were utilized. The low noise is explained in terms of a new model that accounts for the non-local nature of impact ionization. A unity-gain bandwith of 24 GHz and a gain-bandwidth-product of 290 GHz were achieved.

High speed and high gain-bandwidth-product resonant-cavity InGaAs/InAlAs avalanche photodiodes

2003 ◽  
Author(s):  
H. Nie ◽  
C. Lenox ◽  
G. Kinsey ◽  
P. Yuan ◽  
A.L. Holmes ◽  
...  
Keyword(s):  
High Speed ◽  
Avalanche Photodiodes ◽  
Resonant Cavity ◽  
High Gain ◽  
Gain Bandwidth

Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product

1998 ◽  
Vol 10 (3) ◽  
pp. 409-411 ◽  
Author(s):  
H. Nie ◽  
K.A. Anselm ◽  
C. Lenox ◽  
P. Yuan ◽  
C. Hu ◽  
...  
Keyword(s):  
High Speed ◽  
Avalanche Photodiodes ◽  
Resonant Cavity ◽  
High Gain ◽  
Gain Bandwidth

scholarly journals High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

2011 ◽  
Vol 19 (23) ◽  
pp. 23341 ◽  
Author(s):  
Andrew R. J. Marshall ◽  
Pin Jern Ker ◽  
Andrey Krysa ◽  
John P. R. David ◽  
Chee Hing Tan
Keyword(s):  
High Speed ◽  
Avalanche Photodiodes ◽  
Electron Avalanche ◽  
Gain Bandwidth ◽  
Product Limit

High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product

1997 ◽  
Vol 70 (2) ◽  
pp. 161-163 ◽  
Author(s):  
Hui Nie ◽  
K. A. Anselm ◽  
C. Hu ◽  
S. S. Murtaza ◽  
B. G. Streetman ◽  
...  
Keyword(s):  
High Speed ◽  
Avalanche Photodiodes ◽  
Resonant Cavity ◽  
Gain Bandwidth

High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product

1993 ◽  
Vol 5 (6) ◽  
pp. 675-677 ◽  
Author(s):  
I. Watanabe ◽  
S. Sugou ◽  
H. Ishikawa ◽  
T. Anan ◽  
K. Makita ◽  
...  
Keyword(s):  
Dark Current ◽  
High Speed ◽  
Flip Chip ◽  
Gain Bandwidth
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