The effects of fluorine on parametrics and reliability in a 0.18-μm 3.5/6.8 nm dual gate oxide CMOS technology

2001 ◽  
Vol 48 (7) ◽  
pp. 1346-1353 ◽  
Author(s):  
T.B. Hook ◽  
E. Adler ◽  
F. Guarin ◽  
J. Lukaitis ◽  
N. Rovedo ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Cmos Technology ◽  
Dual Gate

A Highly Reliable 0.18 μm SOI CMOS Technology for 3.3V/1.8V Operation Using Hybrid Trench Isolation and Dual Gate Oxide

2001 ◽  
Author(s):  
S. Maeda ◽  
K. Shiga ◽  
H. Naruoka ◽  
N. Hattori ◽  
T. Iwamatsu ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Cmos Technology ◽  
Trench Isolation ◽  
Dual Gate ◽  
Soi Cmos

Deep Submicron CMOS Technology Using Top-Edge Round STI and Dual Gate Oxide for Low Power 256 M-Bit Mobile DRAM

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 1892-1896 ◽  
Author(s):  
Chihoon Lee ◽  
Donggun Park ◽  
Namhyuk Jo ◽  
Chanseong Hwang ◽  
Hyeong Joon Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Dual Gate ◽  
Submicron Cmos

Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11 µm Dual Gate Oxide CMOS Technology

2005 ◽  
Vol 44 (4B) ◽  
pp. 2125-2131
Author(s):  
Kwang-Seng See ◽  
Wai-Shing Lau ◽  
Suey-Li Toh ◽  
Hong Liao ◽  
Jae Gon Lee ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Hot Carrier ◽  
Dual Gate

Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11 μm Dual Gate Oxide CMOS Technology

2004 ◽  
Author(s):  
Kwang-Seng See ◽  
Wai-Shing Lau ◽  
Hong Liao ◽  
Jae Gon Lee ◽  
Elgin Kiok-Boone Quek ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Hot Carrier ◽  
Dual Gate
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