Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors

G. Berthold; E. Zanoni; C. Canali; M. Pavesi; M. Pecchini; M. Manfredi; S.R. Bahl; J.A. del Alamo

doi:10.1109/16.372081

Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.372081 ◽

1995 ◽

Vol 42 (4) ◽

pp. 752-759 ◽

Cited By ~ 15

Author(s):

G. Berthold ◽

E. Zanoni ◽

C. Canali ◽

M. Pavesi ◽

M. Pecchini ◽

...

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Light Emission ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.121418 ◽

1998 ◽

Vol 72 (20) ◽

pp. 2562-2564 ◽

Cited By ~ 73

Author(s):

N. Dyakonova ◽

A. Dickens ◽

M. S. Shur ◽

R. Gaska ◽

J. W. Yang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Impact ionization and light emission in GaAs metal‐semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.354426 ◽

1993 ◽

Vol 74 (6) ◽

pp. 4213-4220 ◽

Cited By ~ 9

Author(s):

A. Neviani ◽

C. Tedesco ◽

E. Zanoni ◽

C. Canali ◽

M. Manfredi ◽

...

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Light Emission ◽

Field Effect Transistors

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Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors

IEEE Electron Device Letters ◽

10.1109/55.475583 ◽

1995 ◽

Vol 16 (12) ◽

pp. 548-550 ◽

Cited By ~ 65

Author(s):

B. Brar ◽

H. Kroemer

Keyword(s):

Quantum Well ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Drain Conductance

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Impact Ionization Effects on the Microwave Performance of InAs Channel Heterostructure Field-Effect Transistors: the Role of Channel Quantization

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1190 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1190-1194 ◽

Cited By ~ 7

Author(s):

Colombo R. Bolognesi ◽

Martin W. Dvorak ◽

David H. Chow

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Channel Quantization ◽

Heterostructure Field Effect Transistors

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A novel analytical model for short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(97)00291-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 605-612

Author(s):

Sang-Ho Song ◽

Dong Myong Kim

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Cited By ~ 40

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽

10.1063/5.0012615 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075212

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Electron Systems ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

IEEE Electron Device Letters ◽

10.1109/55.506356 ◽

1996 ◽

Vol 17 (7) ◽

pp. 325-327 ◽

Cited By ~ 138

Author(s):

M.A. Khan ◽

Q. Chen ◽

J.W. Yang ◽

M.S. Shur ◽

B.T. Dermott ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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