Impact ionization and light emission in GaAs metal‐semiconductor field effect transistors

1993 ◽  
Vol 74 (6) ◽  
pp. 4213-4220 ◽  
Author(s):  
A. Neviani ◽  
C. Tedesco ◽  
E. Zanoni ◽  
C. Canali ◽  
M. Manfredi ◽  
...  
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Light Emission ◽  
Field Effect Transistors

Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors

1995 ◽  
Vol 42 (4) ◽  
pp. 752-759 ◽  
Author(s):  
G. Berthold ◽  
E. Zanoni ◽  
C. Canali ◽  
M. Pavesi ◽  
M. Pecchini ◽  
...  
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Light Emission ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors

Vertical surround-gated silicon nanowire impact ionization field-effect transistors

2007 ◽  
Vol 90 (14) ◽  
pp. 142110 ◽  
Author(s):  
M. T. Björk ◽  
O. Hayden ◽  
H. Schmid ◽  
H. Riel ◽  
W. Riess
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire

Materials Challenges and Applications of Solution-Processed Organic Field-Effect Transistors

MRS Bulletin ◽  
2008 ◽  
Vol 33 (7) ◽  
pp. 676-682 ◽  
Author(s):  
Henning Sirringhaus ◽  
Masahiko Ando
Keyword(s):  
Radio Frequency Identification ◽  
Field Effect ◽  
Industrial Development ◽  
Light Emission ◽  
Field Effect Transistors ◽  
Light Emitting Diode ◽  
Academic Research ◽  
Information Storage ◽  
Organic Field Effect Transistors ◽  
Solution Processed

AbstractOrganic field-effect transistors (FETs) are currently the focus of significant academic research and industrial development interest, as they potentially offer unique advantages over their inorganic counterparts in terms of cost reductions, compatibility with low-temperature and printing-based manufacturing, and potentially even performance. The first generation of products incorporating organic FETs is presently being introduced to the market. This article provides an overview of strategies for achieving high field-effect mobilities in solution-processed organic semiconductor films. We provide an assessment of materials challenges to meet performance and reliability requirements for a range of display and circuit applications and present an overview of state-of-the-art application demonstrations in active-matrix addressing of flexible eletrophoretic, organic light-emitting diode, and liquid-crystal displays, as well as radio-frequency identification tagging. We discuss how the unique functional properties of organic semiconductors, which allow comparatively easy integration of information processing, information storage, light emission, and light detection functions, might enable multifunctional applications that are not easy to create with other material systems.

Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4330-4335
Author(s):  
Jaemin Son ◽  
Doohyeok Lim ◽  
Sangsig Kim
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Operation Mode ◽  
Feedback Loops ◽  
Charge Carriers ◽  
Electrical Characteristics ◽  
Nanowire Transistors ◽  
Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions

2007 ◽  
Vol 46 (6A) ◽  
pp. 3347-3350 ◽  
Author(s):  
Sang-Yun Kim ◽  
Young Min Kim ◽  
Kwang-Ho Baek ◽  
Ki-Heung Park ◽  
Kyoung-Rok Han ◽  
...  
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Body Width ◽  
Ionization Behavior
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