Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors

1998 ◽  
Vol 72 (20) ◽  
pp. 2562-2564 ◽  
Author(s):  
N. Dyakonova ◽  
A. Dickens ◽  
M. S. Shur ◽  
R. Gaska ◽  
J. W. Yang
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

2010 ◽  
Vol 7 (10) ◽  
pp. 2419-2422 ◽  
Author(s):  
Takayuki Sugiyama ◽  
Daisuke Iida ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

High-Temperature Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors

2000 ◽  
Vol 639 ◽  
Author(s):  
Narihiko Maeda ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
High Temperature ◽  
Electron Transport ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Electron Transport Properties ◽  
Gan Heterostructure

Electron transport properties in the Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) have been examined from room temperature up to 400°C. The temperature dependencies of the two-dimensional electron gas (2DEG) mobility have been systematically measured for the samples with different 2DEG densities. The 2DEG mobility has decreased with increasing the temperature, however, its decrease ratio has been no longer large above 300°C. Moreover, the 2DEG mobility has found to be less dependent on the 2DEG density at higher temperatures. These observed features indicate that the 2DEG mobility above room temperature is limited by longitudinal optical (LO) phonon scattering, as is expected by theoretical prediction. The observed 2DEG mobilities at 400°C were as high as from 100 to 120 cm2/Vs, directly providing the evidence for suitability of the HFET of this material system for high-temperature applications. The temperature dependence of the transconductance (gm) of a HFET device has also been examined up to 400°C. It has been revealed that the temperature dependence of gm has basically the same features as those of the 2DEG mobility in the corresponding temperature region.

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

2012 ◽  
Vol 9 (3-4) ◽  
pp. 911-914 ◽  
Author(s):  
Martin Mikulics ◽  
Hilde Hardtdegen ◽  
Andreas Winden ◽  
Alfred Fox ◽  
Michel Marso ◽  
...  
Keyword(s):  
Residual Strain ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
Sign in / Sign up

Export Citation Format

Share Document