Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors

B. Brar; H. Kroemer

doi:10.1109/55.475583

Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors

IEEE Electron Device Letters ◽

10.1109/55.475583 ◽

1995 ◽

Vol 16 (12) ◽

pp. 548-550 ◽

Cited By ~ 65

Author(s):

B. Brar ◽

H. Kroemer

Keyword(s):

Quantum Well ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Drain Conductance

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AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.59906 ◽

1990 ◽

Vol 37 (10) ◽

pp. 2171-2175 ◽

Cited By ~ 26

Author(s):

P.P. Ruden ◽

M. Shur ◽

A.I. Akinwande ◽

J.C. Nohava ◽

D.E. Grider ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.121418 ◽

1998 ◽

Vol 72 (20) ◽

pp. 2562-2564 ◽

Cited By ~ 73

Author(s):

N. Dyakonova ◽

A. Dickens ◽

M. S. Shur ◽

R. Gaska ◽

J. W. Yang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Quantum-well doped p-channel AlGaAs/GaAs/sub 0.85/Sb/sub 0.15//GaAs heterostructure field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.75180 ◽

1991 ◽

Vol 38 (3) ◽

pp. 672-674 ◽

Cited By ~ 3

Author(s):

Y.H. Byun ◽

F.L. Schuermeyer ◽

K. Lee ◽

M. Shur ◽

P. Cook ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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Study of Zinc-Delta-Doped Strained Quantum Well InGaAs/GaAs p-Channel Heterostructure Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.2085 ◽

1996 ◽

Vol 35 (Part 1, No. 4A) ◽

pp. 2085-2089 ◽

Cited By ~ 4

Author(s):

Rong Tay Hsu ◽

Wei Chou Hsu ◽

Jiann Shiun Wang ◽

Ming Jer Kao ◽

Yu Huei Wu ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Strained Quantum Well

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Low temperature impact ionization in indium antimonide high performance quantum well field effect transistors

Journal of Applied Physics ◽

10.1063/1.2190075 ◽

2006 ◽

Vol 99 (8) ◽

pp. 083703 ◽

Cited By ~ 3

Author(s):

J. M. S. Orr ◽

P. D. Buckle ◽

M. Fearn ◽

G. Giavaras ◽

P. J. Wilding ◽

...

Keyword(s):

Low Temperature ◽

Quantum Well ◽

Indium Antimonide ◽

Field Effect ◽

High Performance ◽

Impact Ionization ◽

Field Effect Transistors ◽

Well Field ◽

Temperature Impact

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Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.372081 ◽

1995 ◽

Vol 42 (4) ◽

pp. 752-759 ◽

Cited By ~ 15

Author(s):

G. Berthold ◽

E. Zanoni ◽

C. Canali ◽

M. Pavesi ◽

M. Pecchini ◽

...

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Light Emission ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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Impact Ionization Effects on the Microwave Performance of InAs Channel Heterostructure Field-Effect Transistors: the Role of Channel Quantization

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1190 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1190-1194 ◽

Cited By ~ 7

Author(s):

Colombo R. Bolognesi ◽

Martin W. Dvorak ◽

David H. Chow

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Channel Quantization ◽

Heterostructure Field Effect Transistors

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A novel analytical model for short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(97)00291-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 605-612

Author(s):

Sang-Ho Song ◽

Dong Myong Kim

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Cited By ~ 40

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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