Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

2006 ◽  
Vol 24 (3) ◽  
pp. 624-628 ◽  
Author(s):  
S. P. McAlister ◽  
J. A. Bardwell ◽  
S. Haffouz ◽  
H. Tang
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Self Heating ◽  
Dc Characteristics ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

RF and DC characteristics in Al2O3/Si3N4insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

2006 ◽  
Vol 203 (7) ◽  
pp. 1861-1865 ◽  
Author(s):  
Narihiko Maeda ◽  
Takashi Makimura ◽  
Takashi Maruyama ◽  
Chengxin Wang ◽  
Masanobu Hiroki ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Dc Characteristics ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

2010 ◽  
Vol 7 (10) ◽  
pp. 2419-2422 ◽  
Author(s):  
Takayuki Sugiyama ◽  
Daisuke Iida ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

scholarly journals The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

2003 ◽  
Vol 8 ◽  
Author(s):  
K.A. Filippov ◽  
A.A. Balandin
Keyword(s):  
Temperature Rise ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Boundary Resistance ◽  
Heat Diffusion ◽  
Thermal Boundary Resistance ◽  
Device Layer ◽  
Self Heating ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure field-effect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel.

Analysis of Thermal Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Using Micro-Raman Spectroscopy

2021 ◽  
Vol 21 (11) ◽  
pp. 5736-5741
Author(s):  
Jengsu Yoo ◽  
Soo-Kyung Chang ◽  
Gunwoo Jung ◽  
Kyuheon Kim ◽  
Tae-Soo Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Heat Dissipation ◽  
Field Effect Transistors ◽  
Thermal Characteristics ◽  
Electrode Structure ◽  
Self Heating ◽  
Gate Structure ◽  
Heating Effects ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

We investigated the heat dissipation in heterostructure field-effect transistors (HFETs) using microRaman measurement of the temperature in active AIGaN/GaN. By varying the gate structure, the heat dissipation through the gate was clearly revealed. The temperature increased to 120 °C at the flat gate device although the inserted gate increased to only 37 °C. Our results showed that the inserted gate structure reduced the self-heating effect by three times compared to the flat gate structure. Temperature mapping using micro-Raman measurement confirmed that the temperature of the near gate area was lower than that of the near drain area. This indicated that the inserted gate electrode structure effectively prohibited self-heating effects.

High-Temperature Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors

2000 ◽  
Vol 639 ◽  
Author(s):  
Narihiko Maeda ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
High Temperature ◽  
Electron Transport ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Electron Transport Properties ◽  
Gan Heterostructure

Electron transport properties in the Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) have been examined from room temperature up to 400°C. The temperature dependencies of the two-dimensional electron gas (2DEG) mobility have been systematically measured for the samples with different 2DEG densities. The 2DEG mobility has decreased with increasing the temperature, however, its decrease ratio has been no longer large above 300°C. Moreover, the 2DEG mobility has found to be less dependent on the 2DEG density at higher temperatures. These observed features indicate that the 2DEG mobility above room temperature is limited by longitudinal optical (LO) phonon scattering, as is expected by theoretical prediction. The observed 2DEG mobilities at 400°C were as high as from 100 to 120 cm2/Vs, directly providing the evidence for suitability of the HFET of this material system for high-temperature applications. The temperature dependence of the transconductance (gm) of a HFET device has also been examined up to 400°C. It has been revealed that the temperature dependence of gm has basically the same features as those of the 2DEG mobility in the corresponding temperature region.

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