Arriving at a unified model for hot-carrier degradation in MOSFET's through gate-to-drain capacitance measurement

1994 ◽  
Vol 41 (12) ◽  
pp. 2423-2429 ◽  
Author(s):  
R. Ghodsi ◽  
Yew-Tong Yeow ◽  
Chung Ho Ling ◽  
M.K. Alam
1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-787-C4-790
Author(s):  
P. T.J. BIERMANS ◽  
T. POORTER ◽  
H. J.H. MERKS-EPPINGBROEK

2021 ◽  
Vol 68 (4) ◽  
pp. 1804-1809
Author(s):  
Bernhard Ruch ◽  
Gregor Pobegen ◽  
Tibor Grasser

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