Arriving at a unified model for hot-carrier degradation in MOSFET's through gate-to-drain capacitance measurement
1994 ◽
Vol 41
(12)
◽
pp. 2423-2429
◽
2001 ◽
Vol 41
(2)
◽
pp. 201-209
◽
Keyword(s):
1998 ◽
Vol 45
(1)
◽
pp. 149-159
◽
1993 ◽
Vol 140
(6)
◽
pp. 431
◽
Keyword(s):
1988 ◽
Vol 49
(C4)
◽
pp. C4-651-C4-655
◽
1988 ◽
Vol 49
(C4)
◽
pp. C4-787-C4-790
2021 ◽
Vol 68
(4)
◽
pp. 1804-1809