Proceedings of International Reliability Physics Symposium RELPHY-96
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780327535

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A failure rate based methodology for determining the maximum operating gate electric field, comprehending defect density and burn-in

Proceedings of International Reliability Physics Symposium RELPHY-96 ◽

10.1109/relphy.1996.492059 ◽

1996 ◽

Cited By ~ 5

Author(s):

W.R. Hunter

Keyword(s):

Electric Field ◽

Failure Rate ◽

Defect Density

Download Full-text

A quantitative analysis of stress induced excess current (SIEC) in SiO/sub 2/ films

Proceedings of International Reliability Physics Symposium RELPHY-96 ◽

10.1109/relphy.1996.492067 ◽

1996 ◽

Cited By ~ 25

Author(s):

K. Sakakibara ◽

N. Ajika ◽

M. Hatanaka ◽

H. Miyoshi

Keyword(s):

Quantitative Analysis ◽

Excess Current

Download Full-text

iTEM: a chip-level electromigration reliability diagnosis tool using electrothermal timing simulation

Proceedings of International Reliability Physics Symposium RELPHY-96 ◽

10.1109/relphy.1996.492078 ◽

1996 ◽

Cited By ~ 8

Author(s):

Chin-Chi Teng ◽

Yi-Ka ◽

E. Rosenbaum ◽

Sung-Mo Kang

Keyword(s):

Diagnosis Tool ◽

Timing Simulation

Download Full-text

Hydrogen Passivation of Boron Acceptors and Long-Term Breakdown Voltage Instability in N/sup +//P Su

Proceedings of International Reliability Physics Symposium RELPHY-96 ◽

10.1109/relphy.1996.492138 ◽

1996 ◽

Author(s):

M. Ciappa ◽

P. Malberti ◽

A. Birolini

Keyword(s):

Breakdown Voltage ◽

Hydrogen Passivation ◽

Voltage Instability

Download Full-text

Highly reliable furnace-grown N/sub 2/O tunnel oxide for a microcontroller with embedded flash EEPROM

Proceedings of International Reliability Physics Symposium RELPHY-96 ◽

10.1109/relphy.1996.492061 ◽

1996 ◽

Cited By ~ 2

Author(s):

B. Maiti ◽

D. Shum ◽

W.M. Paulson ◽

Ko-Min Chang ◽

P.J. Tobin ◽

...

Keyword(s):

Embedded Flash

Download Full-text

Field enhanced oxide charge detrapping in n-MOSFET's

Proceedings of International Reliability Physics Symposium RELPHY-96 ◽

10.1109/relphy.1996.492071 ◽

1996 ◽

Cited By ~ 4

Author(s):

Tahui Wang ◽

Tse-En Chang ◽

Lu-Ping Chiang ◽

Chimoon Huang

Keyword(s):

Oxide Charge

Download Full-text

Reliability and electrical properties of new low dielectric constant interlevel dielectrics for high performance ULSI interconnect

Proceedings of International Reliability Physics Symposium RELPHY-96 ◽

10.1109/relphy.1996.492076 ◽

1996 ◽

Cited By ~ 7

Author(s):

B. Zhao ◽

S.-Q. Wang ◽

M. Fiebig ◽

S. Anderson ◽

P.K. Vasudev ◽

...

Keyword(s):

Dielectric Constant ◽

Electrical Properties ◽

High Performance ◽

Low Dielectric Constant ◽

Low Dielectric

Download Full-text

The effect of the floating gate/tunnel SiO/sub 2/ interface on FLASH memory data retention reliability

Proceedings of International Reliability Physics Symposium RELPHY-96 ◽

10.1109/relphy.1996.492054 ◽

1996 ◽

Cited By ~ 3

Author(s):

T. Kubota ◽

K. Ando ◽

S. Muramatsu

Keyword(s):

Flash Memory ◽

Floating Gate ◽

Data Retention

Download Full-text

Degradation mechanism in carbon-doped GaAs minority-carrier injection devices

Proceedings of International Reliability Physics Symposium RELPHY-96 ◽

10.1109/relphy.1996.492122 ◽

1996 ◽

Cited By ~ 9

Author(s):

H. Fushimi ◽

K. Wada

Keyword(s):

Minority Carrier ◽

Degradation Mechanism ◽

Carrier Injection ◽

Carbon Doped

Download Full-text

Short loop monitoring of metal stepcoverage by simple electrical measurements

Proceedings of International Reliability Physics Symposium RELPHY-96 ◽

10.1109/relphy.1996.492075 ◽

1996 ◽

Cited By ~ 2

Author(s):

J.A. van der Pol ◽

E.R. Ooms ◽

H.T. Brugman

Keyword(s):

Electrical Measurements ◽

Short Loop

Download Full-text

Proceedings of International Reliability Physics Symposium RELPHY-96Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A failure rate based methodology for determining the maximum operating gate electric field, comprehending defect density and burn-in

A quantitative analysis of stress induced excess current (SIEC) in SiO/sub 2/ films

iTEM: a chip-level electromigration reliability diagnosis tool using electrothermal timing simulation

Hydrogen Passivation of Boron Acceptors and Long-Term Breakdown Voltage Instability in N/sup +//P Su

Highly reliable furnace-grown N/sub 2/O tunnel oxide for a microcontroller with embedded flash EEPROM

Field enhanced oxide charge detrapping in n-MOSFET's

Reliability and electrical properties of new low dielectric constant interlevel dielectrics for high performance ULSI interconnect

The effect of the floating gate/tunnel SiO/sub 2/ interface on FLASH memory data retention reliability

Degradation mechanism in carbon-doped GaAs minority-carrier injection devices

Short loop monitoring of metal stepcoverage by simple electrical measurements

Proceedings of International Reliability Physics Symposium RELPHY-96
Latest Publications