Analysis of the temperature dependence of hot-carrier-induced degradation in bipolar transistors for Bi-CMOS

1994 ◽  
Vol 41 (6) ◽  
pp. 978-987 ◽  
Author(s):  
H.S. Momose ◽  
H. Iwai
Keyword(s):  
Temperature Dependence ◽  
Bipolar Transistors ◽  
Hot Carrier

Electrical Measurement of the Bandgap of N+ and P+ SiGe Formed by Ge Ion Implantation

1997 ◽  
Vol 500 ◽  
Author(s):  
Akira Nishiyama ◽  
Osamu Arisumi ◽  
Makoto Yoshimi
Keyword(s):  
Ion Implantation ◽  
Theoretical Calculation ◽  
Temperature Dependence ◽  
Electrical Measurement ◽  
Bipolar Transistors ◽  
Floating Body ◽  
High Dose ◽  
Base Current ◽  
Source Regions ◽  
Heavily Doped

ABSTRACTN+ and p+ SiGe layers were formed in the source regions of SOI MOSFETs in order to suppress the floating-body effects by means of high-dose Ge implantation. The bandgaps of the layers were evaluated by measuring the temperature dependence of the base current of the source/channel/drain lateral bipolar transistors. It has been found that the reductions of the bandgaps due to the SiGe formation by the Ge implantation were relatively small, compared to those obtained by the theoretical calculation for heavily doped SiGe. It was also found that the bandgap reduction was larger for n+ layers than that for p+ layers.

Temperature dependence of hot-carrier-induced degradation in 0.1 μm SOI nMOSFETs with thin oxide

2002 ◽  
Vol 23 (7) ◽  
pp. 425-427 ◽  
Author(s):  
Wen-Kuan Yeh ◽  
Wen-Han Wang ◽  
Yean-Kuen Fang ◽  
Fu-Liang Yang
Keyword(s):  
Temperature Dependence ◽  
Hot Carrier ◽  
Thin Oxide
Sign in / Sign up

Export Citation Format

Share Document