On hot-carrier induced degradation, temperature, bias and emitter geometry dependences of the DC characteristics of polysilicon-emitter bipolar transistors

2003 ◽  
Author(s):  
S.R. Sheng ◽  
S.P. McAlister ◽  
C. Storey ◽  
L.-S. Lee ◽  
H.P. Hwang
Keyword(s):  
Bipolar Transistors ◽  
Hot Carrier ◽  
Temperature Bias ◽  
Degradation Temperature ◽  
Dc Characteristics ◽  
Polysilicon Emitter

scholarly journals Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine

2003 ◽  
Vol 50 (4) ◽  
pp. 1141-1144 ◽  
Author(s):  
S.R. Sheng ◽  
W.R. McKinnon ◽  
S.P. McAlister ◽  
C. Storey ◽  
J.S. Hamel ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Hot Carrier ◽  
Polysilicon Emitter

Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors

2002 ◽  
Vol 46 (10) ◽  
pp. 1603-1608 ◽  
Author(s):  
S.R Sheng ◽  
S.P McAlister ◽  
C Storey ◽  
L.-S Lee ◽  
H.P Hwang
Keyword(s):  
Bipolar Transistors ◽  
Hot Carrier ◽  
Polysilicon Emitter

Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies

1998 ◽  
Author(s):  
J. Benbrik ◽  
G. Rolland ◽  
P. Perdu ◽  
B. Benteo ◽  
M. Casari ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Complete Characterization ◽  
Bipolar Transistors ◽  
Ion Beam Irradiation ◽  
Physical Mechanisms ◽  
Dc Characteristics ◽  
Electrical Degradation ◽  
Physical Phenomena

Abstract Focused Ion Beam is commonly used for IC repairs and modifications. However, FIB operation may also induce a damaging impact which can takes place far from the working area due to the charge-up phenomenon. A complete characterization joined to an in-depth understanding of the physical phenomena arising from FIB irradiation is therefore necessary to take into account spurious FIB induced effects and to enhance the success of FIB modifications. In this paper, we present the effects of FIB irradiation on the electrical DC performances of different electronic devices such as nMOS and pMOS transistors, CMOS inverters, PN junctions and bipolar transistors. From the observed behavior of the DC characteristics evolution of the devices, some suggestions about physical mechanisms inducing the electrical degradation are proposed.

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