Electrical Measurement of the Bandgap of N+ and P+ SiGe Formed by Ge Ion Implantation

1997 ◽  
Vol 500 ◽  
Author(s):  
Akira Nishiyama ◽  
Osamu Arisumi ◽  
Makoto Yoshimi
Keyword(s):  
Ion Implantation ◽  
Theoretical Calculation ◽  
Temperature Dependence ◽  
Electrical Measurement ◽  
Bipolar Transistors ◽  
Floating Body ◽  
High Dose ◽  
Base Current ◽  
Source Regions ◽  
Heavily Doped

ABSTRACTN+ and p+ SiGe layers were formed in the source regions of SOI MOSFETs in order to suppress the floating-body effects by means of high-dose Ge implantation. The bandgaps of the layers were evaluated by measuring the temperature dependence of the base current of the source/channel/drain lateral bipolar transistors. It has been found that the reductions of the bandgaps due to the SiGe formation by the Ge implantation were relatively small, compared to those obtained by the theoretical calculation for heavily doped SiGe. It was also found that the bandgap reduction was larger for n+ layers than that for p+ layers.

Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K

2009 ◽  
Vol 56 (10) ◽  
pp. 2169-2177 ◽  
Author(s):  
Lan Luo ◽  
Guofu Niu ◽  
Kurt A. Moen ◽  
John D. Cressler
Keyword(s):  
Temperature Dependence ◽  
Heterojunction Bipolar Transistors ◽  
Bound State ◽  
Ionization Rate ◽  
Bipolar Transistors ◽  
Compact Modeling ◽  
Temperature Dependent ◽  
Alternative Approach ◽  
Complete Ionization ◽  
Heavily Doped

In this paper, we investigate the physics and modeling of temperature dependence of various parasitic resistances in SiGe heterojunction bipolar transistors down to 30 K. Carrier freezeout is shown to be the dominant contributor to increased resistances at cryogenic temperatures for lightly-doped and moderately-doped regions, whereas the temperature dependence of the mobility is the dominant contributor to the temperature dependence of heavily-doped regions. Two incomplete ionization models, the classic model with a doping dependent activation energy and the recent model of Altermatt , are shown to underestimate and overestimate incomplete ionization rate below 100 K for intrinsic base doping, respectively. Analysis of experimental data shows that the bound state fraction factor is temperature dependent and including this temperature dependence enables compact modeling of resistances from 30 to 300 K for moderately-doped regions. For heavily-doped regions, a dual power law mobility approximation with complete ionization is shown to work well down to 30 K. An alternative approach is also presented for heavily-doped resistors which allows one to use the same model equation for all regions.

Conductivity of the Granular Metal Films Obtained by High Dose Ion Implantation into Pmma

1995 ◽  
Vol 388 ◽  
Author(s):  
V.V. Bazarov ◽  
V.Yu. Petukhov ◽  
V.A. Zhikharev ◽  
I.B. Khaibullin
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Metal Films ◽  
High Dose ◽  
High Fluence ◽  
Granular Film ◽  
Satisfactory Explanation ◽  
Thermally Activated ◽  
Ions Implantation

AbstractThin granular metal films in polymethylmethacrylate(PMMA) have been synthesized by 40 keV Fe+, ag+ or Pb+ ions implantation with fluencies up to 6*1017 ion/cm2. the resistivity of synthesized films was measured in the temperature range from 300K. to 5K. the temperature dependence of the resistivity of PMMA implanted with ag+, Pb+ and small fluence Fe+ obeys the well known law lnR~(l/T)1/2. the samples implanted by high fluence Fe+ reveal rather a different behaviour. at low temperature (T<100K) the curves R(T) fit the formulae inR~lnT. the two mechanisms of conductivity of a granular film are considered: direct tunneling and thermally activated hopping. Combined with the morphology features of films, obtained by high fluence Fe+ implantation, the above mentioned consideration offers a satisfactory explanation of the observed temperature dependence R(T).

Ion Implantation in Gallium Indium Arsenide

1983 ◽  
Vol 27 ◽  
Author(s):  
M. Anjum ◽  
M. A. Shahid ◽  
S. S. Gill ◽  
B. J. Sealy ◽  
J. H. Marsh
Keyword(s):  
Ion Implantation ◽  
Indium Arsenide ◽  
Room Temperature ◽  
Gallium Indium Arsenide ◽  
High Dose ◽  
Long Time ◽  
Residual Damage ◽  
Heavily Doped

ABSTRACTWe have studied the formation of heavily doped n-type layers in LPE GaInAs using ion implantation. 400 keV selenium ions have been implanted in dose ranges of 5 × 1013 to 1 × 1015 cm−2 at room temperature. For the high dose implants we have reproducibly achieved activities of 20–40% and sheet Hall mobilities of 700–1000 cm−2 V−1 s−1 and peak carrier concentrations of about 1019 cm−3. TEM and RBS results indicate that for long time anneals residual damage persists in the implanted layers, however, anneals at 800°C for 30 seconds perfectly recrystallize the implanted layers.

BASE COMPOSITION EFFECTS STUDY ON NBR CURRENT AND CURRENT GAIN IN SiGe HBT

2013 ◽  
Vol 27 (19) ◽  
pp. 1350097 ◽  
Author(s):  
HOSSEN DAVOODI ◽  
HASSAN KAATUZIAN
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
Sige Hbt ◽  
Base Current ◽  
Voltage Variation ◽  
Neutral Base ◽  
Heavily Doped ◽  
Frequency Behavior ◽  
20 Nm ◽  
First Time

In present study, SiGe Hetero-junction Bipolar Transistors (HBTs) performances are discussed based on both TCAD and analytical evaluations of the heavily doped base. It is demonstrated that neutral base recombination (NBR) current has significant effects on base current and hence current gain. An optimized Ge profile for 20 nm wide base of understudy structure, with 16% Germanium at EB edge and 24% at CB edge is concluded analytically, which improves DC and high frequency behavior. TCAD simulations reveal that for the specific structure and proposed profile, current gain is about 3500. It also exhibits ft and f max about 325 GHz and 192 GHz, respectively. In the next section for the first time, a comprehensive study of early voltage variation based on total Ge content and Ge grading in base is also presented. Forced base-emitter voltage and forced base current configurations are studied separately. NBR current has been analyzed under two different configuration and prospective guidelines are indicated.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

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