Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors

1992 ◽  
Vol 60 (25) ◽  
pp. 3150-3152 ◽  
Author(s):  
D. Ritter ◽  
R. A. Hamm ◽  
A. Feygenson ◽  
M. B. Panish
Keyword(s):  
Electric Field ◽  
Temperature Dependence ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors

Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors

1984 ◽  
Vol 45 (10) ◽  
pp. 1086-1088 ◽  
Author(s):  
Naresh Chand ◽  
Russ Fischer ◽  
Tim Henderson ◽  
John Klem ◽  
William Kopp ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain

Temperature dependence of current gain of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

2004 ◽  
Vol 201 (9) ◽  
pp. 2190-2193 ◽  
Author(s):  
W. B. Tang ◽  
H. T. Hsu ◽  
C. C. Fan ◽  
C. H. Wang ◽  
N. Y. Li ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain

Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K

2009 ◽  
Vol 56 (10) ◽  
pp. 2169-2177 ◽  
Author(s):  
Lan Luo ◽  
Guofu Niu ◽  
Kurt A. Moen ◽  
John D. Cressler
Keyword(s):  
Temperature Dependence ◽  
Heterojunction Bipolar Transistors ◽  
Bound State ◽  
Ionization Rate ◽  
Bipolar Transistors ◽  
Compact Modeling ◽  
Temperature Dependent ◽  
Alternative Approach ◽  
Complete Ionization ◽  
Heavily Doped

In this paper, we investigate the physics and modeling of temperature dependence of various parasitic resistances in SiGe heterojunction bipolar transistors down to 30 K. Carrier freezeout is shown to be the dominant contributor to increased resistances at cryogenic temperatures for lightly-doped and moderately-doped regions, whereas the temperature dependence of the mobility is the dominant contributor to the temperature dependence of heavily-doped regions. Two incomplete ionization models, the classic model with a doping dependent activation energy and the recent model of Altermatt , are shown to underestimate and overestimate incomplete ionization rate below 100 K for intrinsic base doping, respectively. Analysis of experimental data shows that the bound state fraction factor is temperature dependent and including this temperature dependence enables compact modeling of resistances from 30 to 300 K for moderately-doped regions. For heavily-doped regions, a dual power law mobility approximation with complete ionization is shown to work well down to 30 K. An alternative approach is also presented for heavily-doped resistors which allows one to use the same model equation for all regions.

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