Conduction and charge trapping in polysilicon-silicon nitride-oxide-silicon structures under positive gate bias

1988 ◽  
Vol 35 (4) ◽  
pp. 459-467 ◽  
Author(s):  
M. Aminzadeh ◽  
S. Nozaki ◽  
R.V. Giridhar
Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 356 ◽  
Author(s):  
Seung-Dong Yang ◽  
Jun-Kyo Jung ◽  
Jae-Gab Lim ◽  
Seong-gye Park ◽  
Hi-Deok Lee ◽  
...  

In order to suppress the intra-nitride charge spreading in 3D Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory where the charge trapping layer silicon nitride is shared along the cell string, N2 plasma treated on the silicon nitride is proposed. Experimental results show that the charge loss decreased in the plasma treated device after baking at 300 °C for 2 h. To extract trap density according to the location in the trapping layer, capacitance-voltage analysis was used and N2 plasma treatment was shown to be effective to restrain the interface trap formation between blocking oxide and silicon nitride. Moreover, from X-ray Photoelectron Spectroscopy, the reduction of Si-O-N bonding was observed.


1988 ◽  
Vol 135 (3) ◽  
pp. 776-777 ◽  
Author(s):  
B. Y. Nguyen ◽  
P. J. Tobin ◽  
K. W. Teng ◽  
H. G. Tompkins ◽  
K. M. Chang

2011 ◽  
Vol 99 (2) ◽  
pp. 022104 ◽  
Author(s):  
Te-Chih Chen ◽  
Ting-Chang Chang ◽  
Tien-Yu Hsieh ◽  
Wei-Siang Lu ◽  
Fu-Yen Jian ◽  
...  

2017 ◽  
Vol 17 (3) ◽  
pp. 1555-1563
Author(s):  
Maria Ioannou ◽  
Andreas Delimitis ◽  
Elli Symeou ◽  
John Giapintzakis ◽  
Theodora Kyratsi

Sign in / Sign up

Export Citation Format

Share Document