Electrical breakdown induced by silicon nitride roughness in thin oxide–nitride–oxide films

1996 ◽  
Vol 79 (6) ◽  
pp. 3028-3034 ◽  
Author(s):  
H. Reisinger ◽  
A. Spitzer
Keyword(s):  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Oxide Films ◽  
Thin Oxide ◽  
Nitride Oxide

Electron tunneling through thin oxide–nitride–oxide films under electric field concentration

1998 ◽  
Vol 42 (3) ◽  
pp. 441-446 ◽  
Author(s):  
Naoto Matsuo ◽  
Hiroaki Fujiwara ◽  
Tadaki Miyoshi
Keyword(s):  
Electric Field ◽  
Electron Tunneling ◽  
Oxide Films ◽  
Thin Oxide ◽  
Nitride Oxide

Numerical analysis for conduction mechanism of thin oxide-nitride-oxide films formed on rough poly-Si

1996 ◽  
Vol 17 (2) ◽  
pp. 56-58 ◽  
Author(s):  
N. Matsuo ◽  
H. Fujiwara ◽  
T. Miyoshi ◽  
T. Koyanagi
Keyword(s):  
Numerical Analysis ◽  
Conduction Mechanism ◽  
Oxide Films ◽  
Thin Oxide ◽  
Nitride Oxide

scholarly journals Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon
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