scholarly journals Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory

Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 356 ◽  
Author(s):  
Seung-Dong Yang ◽  
Jun-Kyo Jung ◽  
Jae-Gab Lim ◽  
Seong-gye Park ◽  
Hi-Deok Lee ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Flash Memory ◽  
Silicon Oxide ◽  
Charge Trapping ◽  
Charge Migration ◽  
Charge Loss ◽  
Capacitance Voltage ◽  
Nitride Oxide ◽  
N2 Plasma

In order to suppress the intra-nitride charge spreading in 3D Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory where the charge trapping layer silicon nitride is shared along the cell string, N2 plasma treated on the silicon nitride is proposed. Experimental results show that the charge loss decreased in the plasma treated device after baking at 300 °C for 2 h. To extract trap density according to the location in the trapping layer, capacitance-voltage analysis was used and N2 plasma treatment was shown to be effective to restrain the interface trap formation between blocking oxide and silicon nitride. Moreover, from X-ray Photoelectron Spectroscopy, the reduction of Si-O-N bonding was observed.

Mobile-Ion-Induced Charge Loss Failure in Silicon–Oxide–Nitride–Oxide–Silicon Two-Bit Storage Flash Memory

2009 ◽  
Vol 48 (6) ◽  
pp. 066510 ◽  
Author(s):  
Kazunori Imaoka ◽  
Masahiko Higashi ◽  
Hidehiko Shiraiwa ◽  
Fumihiko Inoue ◽  
Tatsuya Kajita ◽  
...  
Keyword(s):  
Flash Memory ◽  
Silicon Oxide ◽  
Charge Loss ◽  
Induced Charge ◽  
Nitride Oxide

scholarly journals Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1401
Author(s):  
Jun-Kyo Jeong ◽  
Jae-Young Sung ◽  
Woon-San Ko ◽  
Ki-Ryung Nam ◽  
Hi-Deok Lee ◽  
...  
Keyword(s):  
Flash Memory ◽  
Silicon Oxide ◽  
Memory Performance ◽  
Charge Trapping ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Threshold Voltage Shift ◽  
Before And After ◽  
Nitride Oxide

In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is enlarged with the number of interface traps and the data retention properties are deteriorated in the device with underlying poly-Si channel which can be serious problem in gate-last 3D NAND flash memory architecture. To improve the memory performance, high pressure deuterium (D2) annealing is suggested as a low-temperature process and the program window and threshold voltage shift in data retention mode is compared before and after the D2 annealing. The suggested curing is found to be effective in improving the device reliability.

Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO2 and Si3N4 Buffer Layer for System on Panels Application

2013 ◽  
Vol 658 ◽  
pp. 120-123
Author(s):  
Sang Youl Lee ◽  
Jae Sub Oh ◽  
Seung Dong Yang ◽  
Ho Jin Yun ◽  
Kwang Seok Jeong ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Buffer Layer ◽  
Flash Memory ◽  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Memory Device ◽  
Nitride Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitride Oxide

For the system on panel applications, we fabricated and analyzed the polycrystalline silicon (poly-Si) silicon-oxide-nitride-oxide-silicon (SONOS) memory device on different buffer layer such as oxide or nitride. The threshold voltage (VT) and transconductance (gm) are extracted from each device and the X-Ray Diffraction (XRD) measurement is carried out to interpret these characteristics. The results show the device on oxide layer has higher mobility and lower VT than on nitride layer. From the XRD spectra, it can be explained by the fact that the grain size of poly-Si on oxide layer has larger than on nitride layer. The both devices show program/erase characteristics as the potential of SOP memory devices.

TEM Imaging of Amorphous Silicon Oxide - Silicon Nitride - Silicon Oxide Dielectric Films

2001 ◽  
Vol 7 (S2) ◽  
pp. 1228-1229
Author(s):  
Lew Rabenberg ◽  
J. P. Zhou ◽  
Kil-Soo Ko ◽  
Rita Johnson
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Atomic Number ◽  
Silicon Oxide ◽  
Gate Dielectrics ◽  
Dielectric Films ◽  
Amorphous Silicon Oxide ◽  
Nitride Oxide ◽  
Silicon Based

Thin films of amorphous silicon oxide and silicon nitride are routinely used as gate dielectrics in silicon-based microelectronic devices. It is valuable to be able to image them and measure their thicknesses quickly and accurately. This brief note describes conditions that can be used to obtain accurate and reproducible TEM images of oxide-nitride-oxide (ONO) thin films.Obtaining adequate contrast differences between oxide and nitride is not trivial because they have the same average atomic number, and both phases are amorphous. As stoichiometric compounds, both SiO2 and Si3N4 would have average atomic numbers equal to 10. For SiO2, (14+2(8))/3=10, and for Si3N4, (3(14)+4(7))/7=10. Thus, the atomic number contrast between these two is weak or nonexistent. Similarly, the amorphous character prevents the use of conventional diffraction contrast techniques.However, the density of Si3N4 (3.2 g/cm3) is considerably greater than the density of SiO2 (2.6 g/cm3), reflecting the higher average coordination of N compared with O.

Sign in / Sign up

Export Citation Format

Share Document