Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

Te-Chih Chen; Ting-Chang Chang; Tien-Yu Hsieh; Wei-Siang Lu; Fu-Yen Jian; Chih-Tsung Tsai; Sheng-Yao Huang; Chia-Sheng Lin

doi:10.1063/1.3609873

Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

Applied Physics Letters ◽

10.1063/1.3609873 ◽

2011 ◽

Vol 99 (2) ◽

pp. 022104 ◽

Cited By ~ 114

Author(s):

Te-Chih Chen ◽

Ting-Chang Chang ◽

Tien-Yu Hsieh ◽

Wei-Siang Lu ◽

Fu-Yen Jian ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Charge Trapping ◽

Gate Bias ◽

Degradation Behavior ◽

Bias Stress ◽

Trapping Effect ◽

Gate Bias Stress

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Investigating Degradation Behavior of InGaZnO Thin-Film Transistors induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress

ECS Meeting Abstracts ◽

10.1149/ma2012-01/22/927 ◽

2012 ◽

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Charge Trapping ◽

Gate Bias ◽

Degradation Behavior ◽

Bias Stress ◽

Trapping Effect ◽

Gate Bias Stress

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Investigating Degradation Behavior of InGaZnO Thin-Film Transistors Induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress

ECS Transactions ◽

10.1149/1.3701533 ◽

2012 ◽

Vol 45 (7) ◽

pp. 133-140 ◽

Cited By ~ 3

Author(s):

T.-Y. Hsieh ◽

T.-C. Chang ◽

T.-C. Chen ◽

M.-Y. Tsai ◽

Y.-T. Chen ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Charge Trapping ◽

Gate Bias ◽

Degradation Behavior ◽

Bias Stress ◽

Trapping Effect ◽

Gate Bias Stress

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WITHDRAWN: Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress

Thin Solid Films ◽

10.1016/j.tsf.2012.09.093 ◽

2013 ◽

Vol 528 ◽

pp. 53-56 ◽

Cited By ~ 3

Author(s):

Tien-Yu Hsieh ◽

Ting-Chang Chang ◽

Te-Chih Chen ◽

Ming-Yen Tsai ◽

Yu-Te Chen

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Charge Trapping ◽

Gate Bias ◽

Degradation Behavior ◽

Bias Stress ◽

Trapping Effect ◽

Gate Bias Stress

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Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer

Thin Solid Films ◽

10.1016/j.tsf.2016.01.035 ◽

2016 ◽

Vol 603 ◽

pp. 359-362 ◽

Cited By ~ 2

Author(s):

Po-Yung Liao ◽

Ting-Chang Chang ◽

Tien-Yu Hsieh ◽

Ming-Yen Tsai ◽

Bo-Wei Chen ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Gate Bias ◽

Degradation Behavior ◽

Bias Stress ◽

Hole Trapping ◽

Trapping Effect ◽

Dual Gate ◽

Etch Stop ◽

Etch Stop Layer

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Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress

IEEE Electron Device Letters ◽

10.1109/led.2013.2248115 ◽

2013 ◽

Vol 34 (5) ◽

pp. 635-637 ◽

Cited By ~ 25

Author(s):

Fa-Hsyang Chen ◽

Tung-Ming Pan ◽

Ching-Hung Chen ◽

Jiang-Hung Liu ◽

Wu-Hsiung Lin ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Gate Bias ◽

Degradation Behavior ◽

Bias Stress ◽

Electrical Degradation ◽

Gate Bias Stress

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Retraction notice to “Investigating Degradation Behavior of InGaZnO Thin-Film Transistors induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress” [Thin Solid Films, 528 (2013) 53–56]

Thin Solid Films ◽

10.1016/j.tsf.2018.09.047 ◽

2018 ◽

Vol 665 ◽

pp. 195

Author(s):

Tien-Yu Hsieh ◽

Ting-Chang Chang ◽

Te-Chih Chen ◽

Ming-Yen Tsai ◽

Yu-Te Chen

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Charge Trapping ◽

Gate Bias ◽

Degradation Behavior ◽

Thin Solid Films ◽

Bias Stress ◽

Solid Films ◽

Trapping Effect ◽

Retraction Notice

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Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress

Chinese Journal of Liquid Crystals and Displays ◽

10.3788/yjyxs20173202.0091 ◽

2017 ◽

Vol 32 (2) ◽

pp. 91-96

Author(s):

张猛 ZHANG Meng ◽

夏之荷 XIA Zhi-he ◽

周玮 ZHOU Wei ◽

陈荣盛 CHEN Rong-sheng ◽

王文 WONG Man ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Degradation Mechanism ◽

Gate Bias ◽

Degradation Behavior ◽

Silicon Thin Film ◽

Bias Stress ◽

Gate Bias Stress

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Impacts of O₂ Plasma on Negative Gate Bias Stress Instability of Tunnel Thin-Film Transistor

IEEE Transactions on Plasma Science ◽

10.1109/tps.2020.3015729 ◽

2020 ◽

pp. 1-6

Author(s):

William Cheng-Yu Ma ◽

Po-Jen Chen ◽

Yan-Shiuan Chang ◽

Jhe-Wei Jhu ◽

Ting-Hsuan Chang

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Gate Bias ◽

Bias Stress ◽

Gate Bias Stress

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Anomalous degradation behavior of p-type polycrystalline silicon thin film transistors under negative gate bias stress

Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa.2013.6599263 ◽

2013 ◽

Author(s):

Meng Zhang ◽

Wei Zhou ◽

Rongsheng Chen ◽

Man Wong ◽

Hoi-Sing Kwok

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Gate Bias ◽

Degradation Behavior ◽

Silicon Thin Film ◽

Bias Stress ◽

P Type ◽

Gate Bias Stress

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Severe hump phenomenon induced by increased charge trapping and suppression of electron capture effect in amorphous In-Ga-Zn-O thin-film transistors under unipolar pulsed drain bias with static positive gate bias stress

Solid-State Electronics ◽

10.1016/j.sse.2020.107785 ◽

2020 ◽

Vol 167 ◽

pp. 107785 ◽

Cited By ~ 2

Author(s):

Yongjo Kim ◽

Tae-Kyoung Ha ◽

Yong-Jung Cho ◽

Yun-Seong Kang ◽

SangHee Yu ◽

...

Keyword(s):

Thin Film ◽

Electron Capture ◽

Thin Film Transistors ◽

Charge Trapping ◽

Capture Effect ◽

Gate Bias ◽

Bias Stress ◽

Drain Bias ◽

Gate Bias Stress

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