Influences of Processing Chemistry of Silicon Nitride Films on the Charge Trapping Behavior of Oxide/CVD‐Nitride/Oxide Capacitors

1988 ◽  
Vol 135 (3) ◽  
pp. 776-777 ◽  
Author(s):  
B. Y. Nguyen ◽  
P. J. Tobin ◽  
K. W. Teng ◽  
H. G. Tompkins ◽  
K. M. Chang
Keyword(s):  
Silicon Nitride ◽  
Charge Trapping ◽  
Silicon Nitride Films ◽  
Nitride Oxide

Charge-trapping defects in Cat-CVD silicon nitride films

2001 ◽  
Vol 395 (1-2) ◽  
pp. 266-269 ◽  
Author(s):  
T Umeda ◽  
Y Mochizuki ◽  
Y Miyoshi ◽  
Y Nashimoto
Keyword(s):  
Silicon Nitride ◽  
Charge Trapping ◽  
Silicon Nitride Films

Composition and Properties of PECVD Silicon Nitride Films Deposited from SiH4, N2, He Gases

1991 ◽  
Vol 219 ◽  
Author(s):  
J. H. Souk ◽  
G. N. Parsons ◽  
J. Batey
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Etch Rate ◽  
Charge Trapping ◽  
Film Stress ◽  
Bond Density ◽  
Silicon Nitride Films ◽  
Current Voltage ◽  
Optical And Mechanical Properties ◽  
Wet Etch

ABSTRACTAmorphous silicon nitride films deposited from a gas mixture of SiH4 and N2 with a large flow of He have shown many interesting characteristics. The films show a wide variety of electrical, optical, and mechanical properties with varying amounts of SiH4 and N2. The effect of N2 flow rate on film composition in N2-SiH4 processes is quite different from that of NH3 flow in NH3-SiH4 processes. The films were characterized by measurements of (1) Si-H and N-H bond density and bonded hydrogen content, both from infrared absorption, (2) Si/N ratio, (3) refractive index, (4) film stress, and (5) wet chemical etch rate and (6) electrical properties including current-voltage (I-V) and capacitance-voltage (C-V). We find that adding helium to the PECVD process enhances the incorporation of nitrogen in the film and an optimized flow of SiH4 improves the electrical properties. Films with optimum electrical properties with minimum charge trapping are obtained with N/Si ratio close to 1.33. These films have a small amount of Si-H and N-H bonds, and a low etch rate (> 100 A/min) in aqueous HF solution. The properties of these low temperature (250°C) PECVD nitrides have many similarities with LPCVD nitrides. Compared with films deposited from SiH4, NH3 mixture, these films exhibit very low wet etch rates and much lower H contents, but greater hysteresis in C-V characteristics.

scholarly journals Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory

Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 356 ◽  
Author(s):  
Seung-Dong Yang ◽  
Jun-Kyo Jung ◽  
Jae-Gab Lim ◽  
Seong-gye Park ◽  
Hi-Deok Lee ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Flash Memory ◽  
Silicon Oxide ◽  
Charge Trapping ◽  
Charge Migration ◽  
Charge Loss ◽  
Capacitance Voltage ◽  
Nitride Oxide ◽  
N2 Plasma

In order to suppress the intra-nitride charge spreading in 3D Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory where the charge trapping layer silicon nitride is shared along the cell string, N2 plasma treated on the silicon nitride is proposed. Experimental results show that the charge loss decreased in the plasma treated device after baking at 300 °C for 2 h. To extract trap density according to the location in the trapping layer, capacitance-voltage analysis was used and N2 plasma treatment was shown to be effective to restrain the interface trap formation between blocking oxide and silicon nitride. Moreover, from X-ray Photoelectron Spectroscopy, the reduction of Si-O-N bonding was observed.

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