Hg/sub 0.4/Cd/sub 0.6/Te 1.55- mu m avalanche photodiode noise analysis in the vicinity of resonant impact ionization connected with the spin-orbit split-off band

1988 ◽  
Vol 35 (1) ◽  
pp. 101-107 ◽  
Author(s):  
B. Orsal ◽  
R. Alabedra ◽  
M. Valenza ◽  
G.P. Lecoy ◽  
J. Meslage ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Noise Analysis ◽  
Avalanche Photodiode ◽  
Spin Orbit

Noise Analysis of InP/InGaAs Superlattice Avalanche Photodiode

2000 ◽  
Vol 46 (4) ◽  
pp. 215-220
Author(s):  
V Rajamani ◽  
M Madheswaran ◽  
P Chakrabarti
Keyword(s):  
Noise Analysis ◽  
Avalanche Photodiode

Improved dual-carrier high gain impact ionization engineered avalanche photodiode

2012 ◽  
Author(s):  
Jun Huang ◽  
Koushik Banerjee ◽  
Siddhartha Ghosh ◽  
Majeed M. Hayat
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiode ◽  
High Gain

Avalanche photodiode punch-through gain determination through excess noise analysis

2009 ◽  
Vol 106 (6) ◽  
pp. 064507 ◽  
Author(s):  
Han-Din Liu ◽  
Huapu Pan ◽  
Chong Hu ◽  
Dion McIntosh ◽  
Zhiwen Lu ◽  
...  
Keyword(s):  
Noise Analysis ◽  
Avalanche Photodiode ◽  
Excess Noise

Bulk Crystal Growth of Hg1−xCdxTe for Avalanche Photodiode Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
T. Nguyen Duy ◽  
A. Durand ◽  
J. L. Lyot
Keyword(s):  
Composition Range ◽  
Resonance Effect ◽  
Avalanche Photodiode ◽  
Bandgap Energy ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Bulk Crystal Growth ◽  
Spin Orbit Splitting ◽  
Rich Alloy

ABSTRACTHigh gap Hg1−xCdxTe (MCT) crystal is grown by a solvent method using a travelling heater zone. The use of the solvent zone permits a low temperature and low mercury pressure growth of MCT in a large composition range. In the Cadmium rich alloy range the MCT material exhibits a large spin orbit coupling leading to a resonance at Eg = ΔO. Due to this particular resonance effect the ionization coefficient of hole is higher than that of the electron, resulting in a low exess noise factor in the avalanche photodiodes whose bandgap energy is close to the spin orbit splitting ΔO.

Mid-wavelength Infrared Avalanche Photodetector with AlAsSb/GaSb Superlattice

2021 ◽  
Author(s):  
Jiakai Li ◽  
Arash Dehzangi ◽  
Gail Brown ◽  
Manijeh Razeghi
Keyword(s):  
Quantum Well ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Bulk Material ◽  
Avalanche Photodiode ◽  
Applied Bias ◽  
Ionization Coefficients ◽  
Multi Quantum Well ◽  
Ionization Ratio ◽  
Peak Value

Abstract This work demonstrates a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with AlGaAsSb/GaSb multi-quantum well as the multiplication layer and InAsSb bulk material as the absorption layer. The InAsSb-based SAM-APD structure was grown by molecular beam epitaxy. The device exhibits a 100 % cut-off wavelength of ~5.3 µm at 150 K and ~5.6 µm at 200 K. At 150 K and 200 K, the responsivity of the SAM-APD reaches a peak value of 2.26 A/W and 3.84 A/W at 4.0 µm under -1.0 V applied bias, respectively. The SAM-APD device was designed to have electron dominated avalanching mechanism via the multi-quantum well structure as the avalanche architecture. A multiplication gain value of 29 at 200 K was achieved under −14.7 V bias voltage. The electron and hole impact ionization coefficients were calculated and compared. A carrier ionization ratio of ~0.097 was achieved at 200 K.

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