Avalanche photodiode punch-through gain determination through excess noise analysis

2009 ◽  
Vol 106 (6) ◽  
pp. 064507 ◽  
Author(s):  
Han-Din Liu ◽  
Huapu Pan ◽  
Chong Hu ◽  
Dion McIntosh ◽  
Zhiwen Lu ◽  
...  
Keyword(s):  
Noise Analysis ◽  
Avalanche Photodiode ◽  
Excess Noise

Noise Analysis of InP/InGaAs Superlattice Avalanche Photodiode

2000 ◽  
Vol 46 (4) ◽  
pp. 215-220
Author(s):  
V Rajamani ◽  
M Madheswaran ◽  
P Chakrabarti
Keyword(s):  
Noise Analysis ◽  
Avalanche Photodiode

AlGaSb avalanche photodiode exhibiting a very low excess noise factor

1989 ◽  
Vol 54 (24) ◽  
pp. 2422-2423 ◽  
Author(s):  
S. Miura ◽  
T. Mikawa ◽  
H. Kuwatsuka ◽  
N. Yasuoka ◽  
T. Tanahashi ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor

Experimental Studies of Excess Noise Sources in Concrete Based Materials as a Limiting Factor for Electromagnetic Emission Measurement

2013 ◽  
Vol 592-593 ◽  
pp. 529-532
Author(s):  
Robert Macků ◽  
Pavel Koktavý ◽  
Tomas Trčka ◽  
Vladimir Holcman
Keyword(s):  
Flicker Noise ◽  
Noise Analysis ◽  
Experimental Studies ◽  
Electromagnetic Emission ◽  
Dielectric Materials ◽  
Excess Noise ◽  
Limiting Factor ◽  
Emission Measurement ◽  
Noise Sources ◽  
Geometrical Properties

This paper deals with excess noise sources in dielectric materials. We focus especially on the concrete samples that are frequently tested to ensure information about the reliability and level of degradation. Nevertheless, the testing methods are limited mainly by the proper contact creation, signal detection and noise defined sensitivity. Our efforts are directed to the noise properties assessment. It turns out that the Johnson-Nyquist noise and the 1/f (flicker) noise are generated in the different regions with the different response to the internal or external electric field. In addition the noise analysis is affected by the internal polarization phenomena and the material residual humidity. This issue in connection with the sample geometrical properties and the dielectric noise measurement methodology take part in this paper.

Infrared Avalanche Photodiode Detectors

2017 ◽  
Vol 67 (2) ◽  
pp. 159 ◽  
Author(s):  
Anand Singh ◽  
Ravinder Pal
Keyword(s):  
Avalanche Photodiode ◽  
Fast Response ◽  
Optical Signal ◽  
Excess Noise ◽  
Space Applications ◽  
High Quantum Efficiency ◽  
Avalanche Gain ◽  
Internal Gain ◽  
The Status ◽  
Combined Solution

This study presents on the design, fabrication and characteristics of HgCdTe mid-wave infrared avalanche photodiode (MWIR APD). The gain of 800 at - 8 V bias is measured in n+-ν-p+ detector array with pitch size of 30 μm. The gain independent bandwidth of 6 MHz is achieved in the fabricated device. This paper also covers the status of HgCdTe and III-V material based IR-APD technology. These APDs having high internal gain and bandwidth are suitable for the detection of attenuated optical signals such as in the battle field conditions/long range imaging in defence and space applications. It provides a combined solution for both detection and amplification if the detector receives a very weak optical signal. HgCdTe based APDs provide high avalanche gain with low excess noise, high quantum efficiency, low dark current and fast response time.

scholarly journals Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

2013 ◽  
Vol 1 (2) ◽  
pp. 54-65 ◽  
Author(s):  
George M. Williams ◽  
Madison Compton ◽  
David A. Ramirez ◽  
Majeed M. Hayat ◽  
Andrew S. Huntington
Keyword(s):  
Avalanche Photodiode ◽  
Excess Noise ◽  
Gain Stage

A Novel Structure of a-SiN:H/a-Si:H Multilayer Avalanche Photodiode (MAPD)

1993 ◽  
Vol 297 ◽  
Author(s):  
Jiao Lihong ◽  
Meng Zhiguo ◽  
Sun Zhonglin
Keyword(s):  
Reverse Bias ◽  
Impact Ionization ◽  
Incident Light ◽  
Avalanche Photodiode ◽  
Low Noise ◽  
Excess Noise ◽  
Novel Structure ◽  
Ito Glass ◽  
Noise Factors ◽  
The Impact

Because of the lower density of interface states in a-Si:H/a-SiN:H than that in a-Si:H/a-SiC:H, an a-Si:H/a-SiN multilayer reach-through avalanche photodiode is fabricated on an ITO/glass substrate by plasma-enhanced chemical vapor deposition (PECVD) . In order to improve the performance of the a-Si:H/a-SiN:H APD'S, a novel structure is used. By controlling the deposition ratio of silicon and nitrogen of amorphous SiN,the valence band top of a-Si:H is deeper than that of a-SiN:H, that is, the a-Si :H/a-SiN: H system has the electron potential well in a-Si:H, while the hole well is in a-SiN:H, thus we can successfully suppress the hole impact ionization, correspondingly enhance the electron impact ionization effectively.The measurement of current versus voltage is employed to study the multiplication factors and the impact ionization coefficients. The characteristics of a-Si:H/a-SiN:H APD's,such as I-V curves, optical gains, impact ionization rates, excess noise factors, the relative response and the relationship between the breakdown voltage and wavelength, are studied. The electron multiplication factor is Mc=4.5 at reverse bias V=12v. An optical gain of 3.7 at reverse bias VR=12v and an incident light power Pin=3μw is obtained. Homo junction a-Si:H reach-through APD's and homojunction a-Si:H APD's are also fabricated for comparison.The results show that the novel a-Si:H/a-SiN:H APD's is promising in high-gain, low-noise photodetectors.

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