POLARIZATION AND FREQUENCY-POLARIZATION DEPENDENCES OF THREE-PHOTON INTERBAND LINEAR-CIRCULAR DICHROISM IN SEMICONDUCTORS OF CUBIC SYMMETRY

The polarization and frequency-polarization dependences of the linear-circular dichroism and light absorption coefficients in semiconductors of cubic symmetry, caused by vertical three-photon optical transitions between the states of the spin-orbit splitting and conduction bands, are calculated. KEY WORDS: three-photon optical transitions, spin-orbit splitting band, conduction band, linear-circular dichroism, light absorption, semiconductor.

First principles calculation of electronic properties and effective mass of zinc-blende GaN

Based on the first principle pseudopotential plane wave method, the electronic structure of zinc-blende semiconductor GaN is calculated. Using the relativistic treatment of valence states, the spin orbit splitting energy of valence band top near the center of Brillouin region is calculated. Based on the effective mass approximation theory, the effective mass of electrons near the bottom of the conduction band and the effective mass of light and heavy holes near the Γ point along the directions of [100], [110] and [111] are calculated. These parameters are valuable and important parameters of optoelectronic materials.

The bandgap energy of the dilute bismuth GaBi x Sb1−x alloy depending on temperature

The bandgap energy of the dilute bismuth GaBi x Sb1−x alloy vs. temperature is investigated in this study. Its reduced temperature-sensitiveness is because of the localized character of the valence band states (VBS). In order to describe the reduced temperature-sensitiveness of the bandgap energy, a new term including localized energy is added to Varshni's equation. It is found that the localized energy exhibits an increasing trend as the bismuth fraction increases, which indicates that the localized character of the VBS becomes strong with the increasing bismuth fraction. It is also found that the influence of the bismuth fraction on the temperature dependence of the bandgap energy of GaBi x Sb1−x is smaller than that of GaBi x As1−x . In addition, the element indium is undoubtedly a good candidate to lessen the bismuth fraction to realize that the spin-orbit-splitting (SOP) energy surpasses the bandgap energy in GaBi x Sb1−x .

First Study on Nihonium (Nh, Element 113) Chemistry at TASCA

Nihonium (Nh, element 113) and flerovium (Fl, element 114) are the first superheavy elements in which the 7p shell is occupied. High volatility and inertness were predicted for Fl due to the strong relativistic stabilization of the closed 7p1/2 sub-shell, which originates from a large spin-orbit splitting between the 7p1/2 and 7p3/2 orbitals. One unpaired electron in the outermost 7p1/2 sub-shell in Nh is expected to give rise to a higher chemical reactivity. Theoretical predictions of Nh reactivity are discussed, along with results of the first experimental attempts to study Nh chemistry in the gas phase. The experimental observations verify a higher chemical reactivity of Nh atoms compared to its neighbor Fl and call for the development of advanced setups. First tests of a newly developed detection device miniCOMPACT with highly reactive Fr isotopes assure that effective chemical studies of Nh are within reach.

Prediction of unconventional magnetism in doped FeSb2

It is commonly believed that the energy bands of typical collinear antiferromagnets (AFs), which have zero net magnetization, are Kramers spin-degenerate. Kramers nondegeneracy is usually associated with a global time-reversal symmetry breaking (e.g., via ferromagnetism) or with a combination of spin–orbit interaction and broken spatial inversion symmetry. Recently, another type of spin splitting was demonstrated to emerge in some collinear magnets that are fully spin compensated by symmetry, nonrelativistic, and not even necessarily noncentrosymmetric. These materials feature nonzero spin density staggered in real space as seen in traditional AFs but also spin splitting in momentum space, generally seen only in ferromagnets. This results in a combination of materials characteristics typical of both ferromagnets and AFs. Here, we discuss this recently discovered class with application to a well-known semiconductor, FeSb2, and predict that with certain alloying, it becomes magnetic and metallic and features the aforementioned magnetic dualism. The calculated energy bands split antisymmetrically with respect to spin-degenerate nodal surfaces rather than nodal points, as in the case of spin–orbit splitting. The combination of a large (0.2-eV) spin splitting, compensated net magnetization with metallic ground state, and a specific magnetic easy axis generates a large anomalous Hall conductivity (∼150 S/cm) and a sizable magnetooptical Kerr effect, all deemed to be hallmarks of nonzero net magnetization. We identify a large contribution to the anomalous response originating from the spin–orbit interaction gapped anti-Kramers nodal surfaces, a mechanism distinct from the nodal lines and Weyl points in ferromagnets.

Rydberg series of dark excitons and the conduction band spin-orbit splitting in monolayer WSe2

Strong Coulomb correlations together with multi-valley electronic bands in the presence of spin-orbit interaction are at the heart of studies of the rich physics of excitons in monolayers of transition metal dichalcogenides (TMD). Those archetypes of two-dimensional systems promise a design of new optoelectronic devices. In intrinsic TMD monolayers the basic, intravalley excitons, are formed by a hole from the top of the valence band and an electron either from the lower or upper spin-orbit-split conduction band subbands: one of these excitons is optically active, the second one is dark, although possibly observed under special conditions. Here we demonstrate the s-series of Rydberg dark exciton states in tungsten diselenide monolayer, which appears in addition to a conventional bright exciton series in photoluminescence spectra measured in high in-plane magnetic fields. The comparison of energy ladders of bright and dark Rydberg excitons is shown to be a method to experimentally evaluate one of the missing band parameters in TMD monolayers: the amplitude of the spin-orbit splitting of the conduction band.

Separation of surface oxide from bulk Ni by selective Ni 3p photoelectron spectroscopy for chemical analysis in coincidence with Ni M-edge Auger electrons

The chemical shift of core level binding energies makes electron spectroscopy for chemical analysis (ESCA) a workhorse analytical tool for science and industry. For some elements, close lying and overlapping spectral features within the natural life time broadening restrict applications. We establish how the core level binding energy chemical shift can be picked up experimentally by the additional selectivity through Auger electron photoelectron coincidence spectroscopy (APECS). Coincident measurement of Ni 3p photoemission with different MVV Auger regions from specific decay channels, narrows the 3p core-levels to a width of 1.2 eV, resolves the spin–orbit splitting of 1.6 eV and determines the chemical shift of Ni 3p levels of a Ni(111) single crystal and its oxidized surface layer to 0.6 eV.

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Avalanche Photodiodes (APDs) are key semiconductor components that amplify weak optical signals via the impact ionization process, but this process’ stochastic nature introduces ‘excess’ noise, limiting the useful signal to noise ratio (or sensitivity) that is practically achievable. The APD material’s electron and hole ionization coefficients (α and β respectively) are critical parameters in this regard, with very disparate values of α and β necessary to minimize this excess noise. Here, the analysis of thirteen complementary p-i-n/n-i-p diodes shows that alloying GaAs with ≤ 5.1 % Bi dramatically reduces β while leaving α virtually unchanged—enabling a 2 to 100-fold enhancement of the GaAs α/β ratio while extending the wavelength beyond 1.1 µm. Such a dramatic change in only β is unseen in any other dilute alloy and is attributed to the Bi-induced increase of the spin-orbit splitting energy (∆so). Valence band engineering in this way offers an attractive route to enable low noise semiconductor APDs to be developed.