Impact-Ionization-Induced Bandwidth-Enhancement of a Si–SiGe-Based Avalanche Photodiode Operating at a Wavelength of 830 nm With a Gain-Bandwidth Product of 428 GHz

2007 ◽  
Vol 19 (7) ◽  
pp. 474-476 ◽  
Author(s):  
J.-W. Shi ◽  
Y.-S. Wu ◽  
Z.-R. Li ◽  
P.-S. Chen
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiode ◽  
Gain Bandwidth ◽  
Bandwidth Enhancement

Improved dual-carrier high gain impact ionization engineered avalanche photodiode

2012 ◽  
Author(s):  
Jun Huang ◽  
Koushik Banerjee ◽  
Siddhartha Ghosh ◽  
Majeed M. Hayat
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiode ◽  
High Gain

Directed Gain Bandwidth Enhancement in Patch/Slot Hybrid Antenna

2018 ◽  
Author(s):  
Bei Huang ◽  
Jun Zhang ◽  
Zuhua Liu ◽  
Gary Zhang ◽  
Fugen Wu
Keyword(s):  
Gain Bandwidth ◽  
Bandwidth Enhancement

Optimized GaInAs avalanche photodiode with low noise and large gain-bandwidth product

1987 ◽  
Author(s):  
M. KOBAYASHI ◽  
H. MACHIDA ◽  
T. SHIRAI ◽  
Y. KISHI ◽  
N. TAKAGI ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Low Noise ◽  
Gain Bandwidth ◽  
Large Gain

High Gain-Bandwidth Waveguide Coupled Silicon Germanium Avalanche Photodiode

2020 ◽  
Author(s):  
Olivier Carpentier ◽  
Alireza Samani ◽  
Maxime Jacques ◽  
Eslam El-Fiky ◽  
Md Samuil Alam ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Gain Bandwidth
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