Numerical simulation of impact ionization in Ge/AlxGa1−xAs avalanche photodiode

2010 ◽  
Vol 97 (7) ◽  
pp. 073501 ◽  
Author(s):  
C. K. Chia
Keyword(s):  
Numerical Simulation ◽  
Impact Ionization ◽  
Avalanche Photodiode

Improved dual-carrier high gain impact ionization engineered avalanche photodiode

2012 ◽  
Author(s):  
Jun Huang ◽  
Koushik Banerjee ◽  
Siddhartha Ghosh ◽  
Majeed M. Hayat
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiode ◽  
High Gain

Numerical simulation study on In0.53Ga0.47As/In0.52Al0.48As avalanche photodiode

2016 ◽  
Vol 45 (5) ◽  
pp. 0520005
Author(s):  
李慧梅 Li Huimei ◽  
胡晓斌 Hu Xiaobin ◽  
白 霖 Bai Lin ◽  
李晓敏 Li Xiaomin ◽  
于海龙 Yu Hailong ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Simulation Study ◽  
Avalanche Photodiode

Numerical Simulation of the High Gain and Low Breakdown Voltage InGaAs/InP Avalanche Photodiode

2013 ◽  
Vol 652-654 ◽  
pp. 612-615 ◽  
Author(s):  
D.P. Hu ◽  
D. Y. Xiong ◽  
F.M. Guo
Keyword(s):  
Numerical Simulation ◽  
Breakdown Voltage ◽  
Dark Current ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Charge Layer ◽  
Avalanche Gain ◽  
Simulation Results

We present the simulation results of the InGaAs/InP avalanche photodiode (APD). In the structure a 70 nm InGaAsP grade charge layer and a 70 nm InP charge layer between absorption and multiplication layer have been used for reducing the dark current and achieving higher avalanche gain. A 50 avalanche gain around 35 V breakdown voltages has obtained, which has enhanced by nearly 4 times than that of the conventional InGaAs/InP APD. It has been also shown that the dark current in the device can be significantly reduced nearly one order compared to the corresponding conventional one. The numerical simulation means may design the high gain and low breakdown voltage InGaAs/InP APD.

Mid-wavelength Infrared Avalanche Photodetector with AlAsSb/GaSb Superlattice

2021 ◽  
Author(s):  
Jiakai Li ◽  
Arash Dehzangi ◽  
Gail Brown ◽  
Manijeh Razeghi
Keyword(s):  
Quantum Well ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Bulk Material ◽  
Avalanche Photodiode ◽  
Applied Bias ◽  
Ionization Coefficients ◽  
Multi Quantum Well ◽  
Ionization Ratio ◽  
Peak Value

Abstract This work demonstrates a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with AlGaAsSb/GaSb multi-quantum well as the multiplication layer and InAsSb bulk material as the absorption layer. The InAsSb-based SAM-APD structure was grown by molecular beam epitaxy. The device exhibits a 100 % cut-off wavelength of ~5.3 µm at 150 K and ~5.6 µm at 200 K. At 150 K and 200 K, the responsivity of the SAM-APD reaches a peak value of 2.26 A/W and 3.84 A/W at 4.0 µm under -1.0 V applied bias, respectively. The SAM-APD device was designed to have electron dominated avalanching mechanism via the multi-quantum well structure as the avalanche architecture. A multiplication gain value of 29 at 200 K was achieved under −14.7 V bias voltage. The electron and hole impact ionization coefficients were calculated and compared. A carrier ionization ratio of ~0.097 was achieved at 200 K.

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