Bulk Crystal Growth of Hg1−xCdxTe for Avalanche Photodiode Applications
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ABSTRACTHigh gap Hg1−xCdxTe (MCT) crystal is grown by a solvent method using a travelling heater zone. The use of the solvent zone permits a low temperature and low mercury pressure growth of MCT in a large composition range. In the Cadmium rich alloy range the MCT material exhibits a large spin orbit coupling leading to a resonance at Eg = ΔO. Due to this particular resonance effect the ionization coefficient of hole is higher than that of the electron, resulting in a low exess noise factor in the avalanche photodiodes whose bandgap energy is close to the spin orbit splitting ΔO.
1973 ◽
Vol 332
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pp. 365-384
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2018 ◽
Vol 32
(05)
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pp. 1850055
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1988 ◽
Vol 324
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pp. 293-294
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1957 ◽
Vol 240
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pp. 509-523
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1995 ◽
Vol 50
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pp. 1041-1044
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