Hot-carrier-induced interface state generation in submicrometer reoxidized nitrided oxide transistors stressed at 77 K

1991 ◽  
Vol 38 (12) ◽  
pp. 2612-2618 ◽  
Author(s):  
J.S. Cable ◽  
J.C.S. Woo
Keyword(s):  
Interface State ◽  
Hot Carrier ◽  
State Generation

scholarly journals Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

2021 ◽  
pp. 1-8
Author(s):  
Zhicheng Wu ◽  
Jacopo Franco ◽  
Brecht Truijen ◽  
Philippe Roussel ◽  
Ben Kaczer ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Interface State ◽  
Hot Carrier ◽  
State Generation ◽  
The Impact

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

1995 ◽  
Vol 387 ◽  
Author(s):  
L. K. Han ◽  
M. Bhat ◽  
J. Yan ◽  
D. Wristers ◽  
D. L. Kwong
Keyword(s):  
Gate Dielectric ◽  
Defect Density ◽  
Gate Dielectrics ◽  
Charge Trapping ◽  
Interface State ◽  
High Quality ◽  
Hot Carrier ◽  
Thermal Oxide ◽  
State Generation

AbstractThis paper reports on the formation of high quality ultrathin oxynitride gate dielectric by in-situ rapid thermal multiprocessing. Four such gate dielectrics are discussed here; (i) in-situ NO-annealed SiO2, (ii) N2O- or NO- or O2-grown bottom oxide/RTCVD SiO2/thermal oxide, (iii) N2O-grown bottom oxide/Si3N4/N2O-oxide (ONO) and (iv) N2O-grown bottom oxide/RTCVD SiO2/N2O-oxide. Results show that capacitors with NO-based oxynitride gate dielectrics, stacked oxynitride gate dielectrics with varying quality of bottom oxide (O2/N2O/NO), and the ONO structures show high endurance to interface degradation, low defect-density and high charge-to-breakdown compared to thermal oxide. The N2O-last reoxidation step used in the stacked dielectrics and ONO structures is seen to suppress charge trapping and interface state generation under Fowler-Nordheim injection. The stacked oxynitride gate dielectrics also show excellent MOSFET performance in terms of transconductance and mobility. While the current drivability and mobilities are found to be comparable to thermal oxide for N-channel MOSFET's, the hot-carrier immunity of N-channel MOSFET's with the N2O-oxide/CVD-SiO2/N2O-oxide gate dielectrics is found to be significantly enhanced over that of conventional thermal oxide.

Effects of hot carrier induced interface state generation in submicron LDD MOSFET's

1994 ◽  
Vol 41 (9) ◽  
pp. 1618-1622 ◽  
Author(s):  
Tahui Wang ◽  
Chimoon Huang ◽  
P.C. Chou ◽  
S.S.-S. Chung ◽  
Tse-En Chang
Keyword(s):  
Interface State ◽  
Hot Carrier ◽  
State Generation

A Study of Quasi-Breakdown Mechanism in Ultrathin Gate Oxide Under Various Types of Stress

1999 ◽  
Vol 592 ◽  
Author(s):  
Hao Guan ◽  
Zhen Xu ◽  
Byung Jin Cho ◽  
M. F. Li ◽  
Y. D. He
Keyword(s):  
Damage Model ◽  
Gate Oxide ◽  
Interface State ◽  
Hot Electron ◽  
Hot Carriers ◽  
Hot Carrier ◽  
Interface Damage ◽  
Breakdown Mechanism ◽  
State Generation ◽  
Thin Gate Oxide

ABSTRACTThe quasi-breakdown (QB) in ultra thin gate oxide is investigated through the observation of defect generation during high field F-N stress and substrate hot hole and hot electron stresses. The interface trap density increases during stress and reaches to a same critical amount at the onset point of QB regardless of stress current density and stressing carrier type. The experiments also show that hot carriers are much more effective to trigger QB than F-N electrons at the same current level. This can be ascribed to the fact that hot carrier has much higher interface state generation rate than F-N electron does. All results consistently support the interface damage model for the QB occurrence.

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