Base current reversal phenomenon in a CMOS compatible high gain n-p-n gated lateral bipolar transistor

1995 ◽  
Vol 42 (2) ◽  
pp. 321-327 ◽  
Author(s):  
Tzuen-Hsi Huang ◽  
Ming-Jer Chen
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Base Current ◽  
Reversal Phenomenon ◽  
Cmos Compatible ◽  
Current Reversal

Influence of impact-ionization-induced base current reversal on bipolar transistor parameters

1995 ◽  
Vol 42 (9) ◽  
pp. 1636-1646 ◽  
Author(s):  
L. Vendrame ◽  
E. Zabotto ◽  
A. Dal Fabbro ◽  
A. Zanini ◽  
G. Verzellesi ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Transistor ◽  
Base Current ◽  
Current Reversal

A New Reverse Base Current (RBC) of the Bipolar Transistor Induced by Impact Ionization

1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2150-L2152 ◽  
Author(s):  
Koji Sakui ◽  
Takehiro Hasegawa ◽  
Tsuneaki Fuse ◽  
Toshiki Seshita ◽  
Seiichi Aritome ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Transistor ◽  
Base Current

Very high gain AlGaAs/GaAs pnp heterojunction bipolar transistor

1989 ◽  
Vol 25 (16) ◽  
pp. 1047 ◽  
Author(s):  
F.E. Najjar ◽  
P.M. Enquist ◽  
D.B. Slater ◽  
M.Y. Chen ◽  
K.J. Linden
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Very High

Amorphous Silicon Ultra Thin Base Bipolar Phototransistor with High Performance (β=12, τx ≤30μs)

1985 ◽  
Vol 54 ◽  
Author(s):  
C. Y. Chang ◽  
B. S. Wu ◽  
Y. K. Fang ◽  
R. H. Lee
Keyword(s):  
Amorphous Silicon ◽  
High Speed ◽  
High Performance ◽  
Response Speed ◽  
High Gain ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Flat Panel Display ◽  
Element Array ◽  
Good Agreement

ABSTRACTAn n+ /i/p /i/n amorphous silicon bipolar transistor has been successfully fabricated with a current gain of 12 and a response speed of 30 yS This new structure of bipolar transistor has a very thin base (200Å), therefore, high gain and high speed is obtainable. This device has a very promising applications as a flat panel display transistor and a phototransistor in photosensing element/array and photo coupler. Electrical and optical characteristics have been extensively investigated. Theoretical model and experimental results are plausibly in good agreement.Variation from the fundamental structure is also been developed, such as the Schottky emitter Al/i/p /i/n bipolar transistor.

Elevated Temperature Characteristics of Carbon-Doped GaInP/GaAs Heterojunction Bipolar Transistor Grown by Solid Source Molecular Beam Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
Zhang Rong ◽  
Yoon Soon Fatt ◽  
Tan Kianhua ◽  
Sun Zhongzhe ◽  
Huang Qingfeng
Keyword(s):  
Activation Energy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Base Material ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Collector Current ◽  
Carbon Doped ◽  
Base Current ◽  
Recombination Current

ABSTRACTThis paper reports the characteristics of GaInP/GaAs heterojunction bipolar transistor (HBT) with carbon-doped GaAs base layer grown by solid source molecular beam epitaxy (SSMBE) using carbon tetrabromide (CBr4) as p-type dopant precursor. Hydrofluoric acid (HF) was used to passivate the GaInP/GaAs HBTs. At base bias voltages below 0.8V in the Gummel plot, the base current of large-area devices after HF treatment was greatly reduced. This indicates that the extrinsic base surface recombination current was greatly reduced. After HF treatment, detailed DC characterization of the device performance from 300K to 380K was carried out and the carrier transport properties were investigated. The base current and collector current ideality factors at 300K were 1.12 and 1.01, respectively. This indicates that the space- charge region recombination current in the base is insignificant. From the temperature- dependent Gummel plot, the activation energies of collector current and base current were obtained. For the collector current, the activation energy is 1.4eV, which is close to the bandgap of the GaAs base. This indicates that the collector current is determined by the drift-diffusion process, in which an energy barrier of the same magnitude as the base bandgap is to be overcome by electrons before they reach the collector. For the base current, the activation energy is also 1.4eV, which is close to the bandgap of GaAs, indicating that band-to-band recombination plays a dominant role in the base current. No trap-related recombination was observed for the base and collector currents, which further indicates the high quality carbon-doped GaAs base material for the HBT structures.

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