Gate-oxide thickness dependence of hot-carrier-induced degradation in buried p-MOSFET's

1992 ◽  
Vol 39 (5) ◽  
pp. 1223-1228 ◽  
Author(s):  
A. Hiroki ◽  
S. Odanaka
1990 ◽  
Vol 37 (6) ◽  
pp. 1496-1503 ◽  
Author(s):  
Y. Toyoshima ◽  
H. Iwai ◽  
F. Matsuoka ◽  
H. Hayashida ◽  
K. Maeguchi ◽  
...  

ESSDERC ’89 ◽  
1989 ◽  
pp. 732-735 ◽  
Author(s):  
Y. Hiruta ◽  
H. Oyamatsu ◽  
H. S. Momose ◽  
H. Iwai ◽  
K. Maeguchi

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