Peak spacing statistics in silicon single-electron transistors: Size and gate oxide thickness dependence

2006 ◽  
Vol 34 (1-2) ◽  
pp. 620-623
Author(s):  
X. Jehl ◽  
M. Hofheinz ◽  
M. Boehm ◽  
M. Sanquer ◽  
G. Molas ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Thickness Dependence ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Gate Oxide Thickness ◽  
Electron Transistors

Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

2005 ◽  
Vol 97 (11) ◽  
pp. 116106 ◽  
Author(s):  
Yue-Min Wan ◽  
Kuo-Dong Huang ◽  
S. F. Hu ◽  
C. L. Sung ◽  
Y. C. Chou
Keyword(s):  
Coulomb Blockade ◽  
Gate Oxide ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures

2010 ◽  
Vol 25 (7) ◽  
pp. 075007 ◽  
Author(s):  
M Ťapajna ◽  
A Paskaleva ◽  
E Atanassova ◽  
E Dobročka ◽  
K Hušeková ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Thickness Dependence ◽  
Gate Oxide Thickness ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET's

1990 ◽  
Vol 37 (6) ◽  
pp. 1496-1503 ◽  
Author(s):  
Y. Toyoshima ◽  
H. Iwai ◽  
F. Matsuoka ◽  
H. Hayashida ◽  
K. Maeguchi ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Thickness Dependence ◽  
Hot Carrier ◽  
Gate Oxide Thickness ◽  
Thin Gate Oxide

Gate Oxide Thickness Dependence of Hot Carrier Induced Degradation on PMOSFETs

ESSDERC ’89 ◽  
1989 ◽  
pp. 732-735 ◽  
Author(s):  
Y. Hiruta ◽  
H. Oyamatsu ◽  
H. S. Momose ◽  
H. Iwai ◽  
K. Maeguchi
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Thickness Dependence ◽  
Hot Carrier ◽  
Gate Oxide Thickness
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