scholarly journals Carrier localization mechanisms in InxGa1−xN/GaN quantum wells

2011 ◽  
Vol 83 (11) ◽  
Author(s):  
D. Watson-Parris ◽  
M. J. Godfrey ◽  
P. Dawson ◽  
R. A. Oliver ◽  
M. J. Galtrey ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Localization

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting

Evidence of Trion and Carrier Localization in Modulation Doped Quantum Wells by fs and ps FWM Studies

1998 ◽  
pp. 254-256
Author(s):  
P. Gilliot ◽  
D. Brinkmann ◽  
J. Kudrna ◽  
B. Hönerlage ◽  
A. Arnoult ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Localization

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

2017 ◽  
Vol 95 (12) ◽  
Author(s):  
M. Shahmohammadi ◽  
W. Liu ◽  
G. Rossbach ◽  
L. Lahourcade ◽  
A. Dussaigne ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
Carrier Localization

scholarly journals Carrier localization effect in polarized InGaN multiple quantum wells

2005 ◽  
Vol 2 (7) ◽  
pp. 2753-2756 ◽  
Author(s):  
A. ?ukauskas ◽  
K. Kazlauskas ◽  
G. Tamulaitis ◽  
J. Mickevi?ius ◽  
S. Jur??nas ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Localization Effect

Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization

2005 ◽  
Vol 341 (1-4) ◽  
pp. 297-302 ◽  
Author(s):  
Q.X. Zhao ◽  
S.M. Wang ◽  
Y.Q. Wei ◽  
M. Sadeghi ◽  
A. Larsson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Carrier Localization ◽  
Mobility Edge ◽  
Localized Excitons

Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition

2013 ◽  
Vol 102 (11) ◽  
pp. 113101 ◽  
Author(s):  
Jiri Thoma ◽  
Baolai Liang ◽  
Liam Lewis ◽  
Stephen P. Hegarty ◽  
Guillaume Huyet ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Annealing Effect ◽  
Carrier Localization
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